Blue laser diodes manufacturing in Poland

Mike Leszczynski 

Polish Academy of Sciences, Institute of High Pressure Physics (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland

Abstract

Blue optoelectronics is a new branch of semiconductor technology revolutionizing many areas of our everyday life.

Blue, green, ultraviolet LEDs are being produced in large quantities already, soon white LEDs based on gallium nitride will replace our incandescent bulbs.

Much more difficult technology is manufacturing violet laser diodes (LDs). In that case, much lower defect density is necessary and as substrates for epitaxy GaN single crystals musty be used (not a foreign substrate like sapphire used in LED production).

The Institute of High Pressure Physics UNIIPRESS has developed a unique high-pressure method of growing single crystals of GaN with the lowest dislocation density. This advantage over competitors was a driving force in developing violet laser-diode technology and creation a commercial spin-off TopGaN.

The presentation will show a current status of the company and the forecast for the nearest future.

In particular, we will focus on the following issues:

i) at what stage of technology created at the academic institution a spin-off company should be founded?

ii) what kind of support from the governmental institutions is needed?

iii) how to seek the financial investors?

iv) is symbiosis of the academic institution and its spin-off possible and desirable?

 

Related papers
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  2. Multicolor laser diode arrays for medical applications
  3. Efficiency „droop” in nitride light emitters
  4. Nitrides lasers after BluRay
  5. Surface morphology of InGaN layers
  6. Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with two temperatures process studied by transmission electron microscopy.
  7. Polymer film-coated high electron mobility transistors, based on GaN heterostructures, as sensors for some benzene derivatives
  8. X-ray Diffraction as a Tool of InGaN layer Characterization.
  9. Rietveld refinement for polycrystalline indium nitride
  10. PLASTIC PROPERTIES OF GaN AND Al2O3 CRYSTAL: FEM-SIMULATION OF NANOINDENTATION CONFIRMED BY HIGH-RESOLUTION MICROSCOPY
  11. Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
  12. Built-in electric fields in group III-nitride light emitting quantum structures
  13. Bowing of epitaxial structures grown on bulk GaN substrates
  14. The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy

Presentation: Oral at Nano2business workshop, by Mike Leszczynski
See On-line Journal of Nano2business workshop

Submitted: 2007-02-01 09:26
Revised:   2009-06-07 00:44