Magnetotransport studies of Ga(Mn,Fe)N bulk crystals
|C. Jastrzebski 2, Wojtek Gebicki 2, Michal Bockowski 1, B. Strojek 3, T. Szyszko 3, Sławomir Podsiadło 3|
1. Polish Academy of Sciences, High Pressure Research Center (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
GaN based DMS are considered the very promising wide band gap materials for spintronic applications. Electric properties (carrier concentration, mobility) of the materials are crucial for understanding the nature of magnetism in these materials and in consequence for use in possible applications. It seems undoubtedly that electric and magnetic properties of the materials are tightly coupled.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium A, by Cezariusz Jastrzebski
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-27 23:06 Revised: 2009-06-08 12:55