Layers of gallium nitride and gallium nitride doped with manganese were obtained by Sandwich Sublimation Method (SSM). Experiments were carried out in tubular quartz reactors with induction heating at temperatures from 1100^OC to 1200^OC. GaN layers were prapared from gallium nitride powder, which was the source of gallium. GaMnN layers were prepared from mixtures of powders of gallium nitride and manganese. In both cases, reagents were placed in a quartz boat on top of a graphite cylinder, which was the heating element. Layers were grown on GaN thin films obtained by MOCVD. The distance between powders and MOCVD substrate was about 5mm, and was indispensable for gallium and manganese transfer. The obtained GaN and GaMnN layers were characterized by optical microscope, X-ray studies and Raman studies.

Supported partially by KBN 3 T09B 056 28 and KBN-PBZ-044/P03/2001 from the State Committee for Scientific Research (Poland)

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