Mass flow and reaction analysis of the growth of GaN layers by HVPE
|Pawel Kempisty 1, Stanisław Krukowski 2, Izabella Grzegory 2, Bolesław Łucznik 2, B. Pastuszka 2, Michał Boćkowski 2, Sylwester Porowski 2|
1. Warsaw University of Technology, Department of Technical Physics and Applied Mathematics, Warszawa, Poland
HVPE growth in horizontal flow reactor has been analyzed using finite element calculation and molecular estimates of the reaction rates. The reaction rate of the HCl with liquid Ga has been estimated using ideal gas approximation for HCl vapor. The conversion HCl to GaCl rate has been obtained in function of the pressure, temperature, flow velocity and the geometry of the reactor.
Presentation: poster at E-MRS Fall Meeting 2005, Symposium A, by Pawel Kempisty
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-06-06 12:45 Revised: 2009-06-07 00:44