The present study was undertaken to determine if BP crystals could be produced by a simpler technique, close-spaced vapor transport (CVST). This technique has proven very successful in achieving very high growth rates for a wide variety of materials including CdTe, Cu(In,Ga)Se₂, and GaP. Boron phosphide crystals were prepared on silicon and sapphire substrates using CSVT and characterized by Raman spectroscopy, scanning Auger microscopy, x-ray diffraction, and optical microscopy. Amber colour, polycrystalline BP crystals were produced by the sublimation of BP powder from 1050 to 1450 C in an argon atmosphere. The crystal size increased and the crystal density decreased with increasing temperature. Well-faceted crystals were produced at an intermediate temperature of 1200 C. A fibrous mass of fine whiskers, only loosely attached to the substrate were produce at the highest temperature. The peak position of the Raman LO mode of the BP crystals was shifted to higher wavenumbers than the BP powder source, suggesting that the crystals were compressively strained.