Low magnetization of thick substrates – the origin of giant magnetization of thin films on top of them?

Kay Potzger ,  Artem Shalimov ,  Shengqiang Zhou ,  Olga Roshchupkina 

Forschungszentrum Rossendorf (FZR), Dresden 01314, Germany


We present ferromagnetic properties of common substrate materials for oxide thin film growth, i.e. ZnO and yttria stabilized zirconia. Those were induced by a combination of high temperature vacumm processing and ion implantation simulating common preparation methods for the creation of diluted magnetic oxides. Moreover, we will focus on the coexistance of ferromagnetism induced by defect and metallic nanoclusters.


Related papers
  1. The Rossendorf beamline BM20 at the ESRF: Overview and perspectives
  2. Structure of Si:Mn annealed under enhanced stress conditions
  3. Structure properties of bulk ZnO crystals
  4. Ferromagnetic Fe-implanted ZnO
  5. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
  6. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
  7. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
  8. Lattice parameters changes of GaMnAs layers induced by annealing
  9. Structural and optical properties of high temperature and high pressure treated Si:H,D

Presentation: Oral at E-MRS Fall Meeting 2009, Symposium E, by Kay Potzger
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-04-01 17:09
Revised:   2009-06-07 00:48