Transmission Electron Microscopy of Iridium Silicide Contacts for Advanced MOSFET Structures with Schottky Source and Drain

Adam Łaszcz 1Jerzy Kątcki 1Jacek Ratajczak Guilhem Larrieu 2Emmanuel Dubois 2Xavier Wallart 2

1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
2. IEMN/ISEN, UMRS CNRS 8520, Avenue Poincare, BP69, Villeneuve d'Ascq 59652, France

Abstract

The IrSix ohmic contacts has been used in modern Accumulated Low Schottky Barrier MOSFET on SOI. An IrSix layer has been formed as a result of metallurgical reaction between metal and semiconductor during annealing. The process of iridium silicide formation in the Ir/Si/SiO2/Si structure has been studied by means of cross-sectional transmission electron microscopy (XTEM). The influence of annealing temperatures (300, 600, 900oC) on the Ir/Si interface was analysed. The formation of a thin IrSix layer was observed at a temperature as low as 300oC.In the Ir/Si/SiO2/Si structure annealed at 600oC the Ir atoms penetrated the Si layer, causing disturbance of the Ir/Si interface. IrSix grains were formed in Si after annealing at 900oC. An expansion of the IrSix grains in the Si layer was observed. TEM results were correlated with XPS and electrical measurements.

 

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Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Adam Łaszcz
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-27 15:42
Revised:   2009-06-08 12:55