Wojciech Wierzchowski

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Affiliation:

Institute of Electronic Materials Technology

address: Wólczyńska 133, Warszawa, 01-919, Poland
phone: 22 835 30 41
fax: 22 834 90 03
web: http://www.itme.edu.pl

Participant:

E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:
E-MRS Fall Meeting 2003
Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing

Publications:
  1. Observation of defects in g - irradiated Cz-si annealed under high pressure
  2. Observation of individual dislocations in 6h and 4h sic by means of back-reflection methods of x-ray diffraction topography

  3. Investigation of insulated buried layers obtained by ion implantation in AlGaAs with various Al concentration

  4. Synchrotron topographic investigation of SiC bulk crystals and epitaxial layers
  5. Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing
  6. The investigation of structural perfection and facetting in highly Er - doped Yb3Al5O12 crystals
  7. X-ray topography of Ca0.5Sr0.5NdAlO4 single crystal



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