Wojciech Wierzchowski

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Affiliation:


Institute of Electronic Materials Technology

address: Wólczyńska 133, Warszawa, 01-919, Poland
phone: 22 835 30 41
fax: 22 834 90 03
web: http://www.itme.edu.pl

Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing

Participant:


E-MRS Fall Meeting 2005

began: 2005-09-05
ended: 2005-09-09
Presented:

E-MRS Fall Meeting 2005

Investigation of insulated buried layers obtained by ion implantation in AlGaAs with various Al concentration


Participant:


Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

began: 2007-05-20
ended: 2007-05-24
Presented:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Observation of defects in g - irradiated Cz-si annealed under high pressure

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Observation of individual dislocations in 6h and 4h sic by means of back-reflection methods of x-ray diffraction topography

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Synchrotron topographic investigation of SiC bulk crystals and epitaxial layers

Participant:


IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego

began: 2011-09-26
ended: 2011-09-27
Presented:

IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego

Evaluation of the depth extension of the damages induced by FLASH pulses in silicon crystals

Publications:


  1. Characterization of the defect structure in gadolinium orthovanadate single crystals grown by the Czochralski method
  2. Damage of gallium arsenide created after irradiation by ultra-short VUV laser pulse
  3. Evaluation of the depth extension of the damages induced by FLASH pulses in silicon crystals
  4. New Ca10Li(VO4)7 laser host: growth and properties
  5. Observation of defects in g - irradiated Cz-si annealed under high pressure
  6. Observation of individual dislocations in 6h and 4h sic by means of back-reflection methods of x-ray diffraction topography
  7. Investigation of insulated buried layers obtained by ion implantation in AlGaAs with various Al concentration

  8. Synchrotron topographic investigation of SiC bulk crystals and epitaxial layers
  9. Synchrotron topographic studies of domain structure in Czochralski grown PrxLa1-xAlO3 crystals
  10. Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing
  11. The investigation of structural perfection and facetting in highly Er - doped Yb3Al5O12 crystals
  12. Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
  13. X-ray topography of Ca0.5Sr0.5NdAlO4 single crystal



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