Synthesis of one-dimensional chalcogenides by a novel hydrothermal process

Hui Zhang ,  Deren Yang ,  Yujue Ji ,  Xiangyang Ma ,  Jin Xu ,  Duanlin Que 

Zhejiang University, Stete Key Lab of Silicon Materials (ZJU), Zhe Da Lu 38, Hangzhou 310027, China


During the past decade, one-dimensional (1D) nanostructured materials have sparked a worldwide interest because of their unique electronic, optical, and mechanical properties and their potential applications in nanodevices and functional materials. Recently, Qian et al. has reported a solvothermal synthesis of chalcogenides using enthylenediamine as the solvent [1-2]. However, it is inevitable to use toxic, dangerous and expensive solvent in the solvothermal process. Addressing this issue, we have presented a thioglyeolic acid (TGA) assisted hydrothermal method to prepare one-dimensional chalcogenides, which is milder, simpler, more practical, and more environmentally friendly in comparison with the solvothermal method.

We have successfully prepared CdS nanorods, Bi2S3 nanowires, and SnS2 nanobelts using this method. We believed that the formation of the complexed chalcogenide clusters during the hydrothermal process is the key factor to the growth of one-dimensional chalcogenide. Based on this idea, we have introduced TGA-assisted hydrothermal method to prepare FeS nanostructure. The X-ray diffraction pattern (XRD) and Transmission electron microscopy image (TEM) indicate that the FeS nanorods have been prepared by TGA-assisted hydrothermal process using Na2S as sulphur source. Furthermore, the different sulphur source and the ratio of Fe/S have greatly affected on the morphology and structure of FeS. The mechanism for the TGA assisted hydrothermal synthesis of FeS nanostructures has been preliminary presented.

(1) Xie, Y. Huang, J. Li, B. Liu, Y. Qian, Y. Advanced Materials 2000, 12, 1523.

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Presentation: oral at E-MRS Fall Meeting 2003, Symposium F, by Deren Yang
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-05 09:17
Revised:   2009-06-08 12:55
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