Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing
|Wojciech Wierzchowski 2, Julian Auleytner 4, Krzysztof Wieteska 3, Walter Graeff 1, Danuta Zymirska 4|
1. Hamburger Synchrotronstrahlungslabor HASYLAB (HASYLAB), Notkestrasse 85, Hamburg D-22603, Germany
A slab formed sample cut out from low doped Czochralski-grown silicon crystal was implanted with 3 MeV Ar ions to the dose 5 ´ 1014 cm-2 and thermally annealed in two step cycle at 400 C and 700 C. The crystal was characterized with a number of X-Ray diffraction methods exploring synchrotron source of radiation. The methods included white beam Bragg-case section and projection topography, plane wave topography and studying of local rocking curves with a small probe beam.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Wojciech Wierzchowski
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-26 21:40 Revised: 2009-06-08 12:55