Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing

Wojciech Wierzchowski 2Julian Auleytner 4Krzysztof Wieteska 3Walter Graeff 1Danuta Zymirska 4

1. Hamburger Synchrotronstrahlungslabor HASYLAB (HASYLAB), Notkestrasse 85, Hamburg D-22603, Germany
2. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
3. Institute of Atomic Energy, Otwock-Świerk 05-400, Poland
4. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland

Abstract

A slab formed sample cut out from low doped Czochralski-grown silicon crystal was implanted with 3 MeV Ar ions to the dose 5 ´ 1014 cm-2 and thermally annealed in two step cycle at 400 C and 700 C. The crystal was characterized with a number of X-Ray diffraction methods exploring synchrotron source of radiation. The methods included white beam Bragg-case section and projection topography, plane wave topography and studying of local rocking curves with a small probe beam.

It was found that the performed annealing did not quite remove the lattice strain induced by the implantation. The residual strain caused the series of interference maxima on the low angle side of substrate maximum in the rocking curve. The rocking curves were different in different regions of the implanted area and together we observed characteristic fringes in plane wave topographs. These effects were most probably caused by unhomogeneity of the ion beam. The analysis of rocking curves including the numerical simulation points the existence of local strain profile maximum situated below the shot-through layer with a relatively small deformation. The Bragg-case section pattern of the implanted area revealed the presence of tiny defects situated at the depth corresponding to maximum of ion range distribution, which may be eventually interpreted as small dislocation loops formed from point defect clusters. The topographs revealed however a concentration of defects in the whole volume of the crystal that most probably are the oxygen precipitates formed during thermal annealing.


 

Related papers
  1. New Ca10Li(VO4)7 laser host: growth and properties
  2. Characterization of the defect structure in gadolinium orthovanadate single crystals grown by the Czochralski method
  3. Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
  4. Synchrotron topographic studies of domain structure in Czochralski grown PrxLa1-xAlO3 crystals
  5. Evaluation of the depth extension of the damages induced by FLASH pulses in silicon crystals
  6. Damage of gallium arsenide created after irradiation by ultra-short VUV laser pulse
  7. Observation of individual dislocations in 6h and 4h sic by means of back-reflection methods of x-ray diffraction topography
  8. Synchrotron topographic investigation of SiC bulk crystals and epitaxial layers
  9. The investigation of structural perfection and facetting in highly Er - doped Yb3Al5O12 crystals
  10. Observation of defects in g - irradiated Cz-si annealed under high pressure
  11. X-ray topography of Ca0.5Sr0.5NdAlO4 single crystal
  12. Investigation of insulated buried layers obtained by ion implantation in AlGaAs with various Al concentration
  13. Modification of the nanostructure of the amorphised Si near-surface layer
  14. X-ray study of quartz single crystals implanted with fast Ar ions
  15. X-ray diffractometric study of micro-precipitates created by fast nitrogen ions in GaAs single crystal
  16. Nanostructure of laser annealed Ge-implanted near-surface Si layers
  17. Defect structure of Sn-implanted Si crystal annealed by nanosecond laser pulse

Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Wojciech Wierzchowski
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-26 21:40
Revised:   2009-06-08 12:55