Investigation of insulated buried layers obtained by ion implantation in AlGaAs with various Al concentration

Wojciech Wierzchowski 2Krzysztof Wieteska 5Walter Graeff 1Grzegorz Gawlik 6Andrzej Turos 2,3Arndt Mucklich 4

1. Hamburger Synchrotronstrahlungslabor HASYLAB (HASYLAB), Notkestrasse 85, Hamburg D-22603, Germany
2. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
3. Soltan Institute for Nuclear Studies, Hoża 69, Warszawa 00-681, Poland
4. Forschungszentrum Rossendorf (FZR), Dresden 01314, Germany
5. Institute of Atomic Energy (IEA), Otwock-Świerk 05-400, Poland
6. Institute of Electronic Materials Technology (ITME), Warszawa 01919, Poland


The important element of modern AlxGa1-xAs semiconductor lasers is an insulating buried layer introduced by selective implantation with He or H ions. The difficulty in obtaining of such layers is connected with controlling of strain and defects introduced by implantation, which may disturb the action of the laser. The strain may be however controlled in less complicated laterally homogenous structures or even single implanted layer.

The insulated buried layers obtained by the implantatation of 150 keV He ions to AlxGa1-xAs with various concentration of Al and GaAs were studied with different synchrotron diffraction methods exploring both white and monochromatic beam. The selected samples were studied with high resolution transmission electron microscopy. The implantation were performed in from room temperature, 80º C and 120º C. The doses were in the range from 2 x 1016 to 6 x 1016 cm-2. The synchrotron experiment included taking local rocking curves using small 50 x 50 µm2 probe beam. The rocking curves exhibited characteristic sequence of interference maxima and enabled the analysis of the strain profiles by fitting the theoretical rocking curves obtained by numerical integration of the Takagi-Taupin equations. The white beam synchrotron back reflection topography revealed a sequence of strain modulation fringes similar to the main interference maxima in the rocking curves. They also confirm the uniformity of applied dose and lack of extended crystallographic defects which could be caused by implantation. The characteristic feature of the evaluated profiles was the existence of the deformed region close to the surface which points that the deformation is mainly caused by the point defects produced by incident ions and the recoils. The other feature increasing with the temperature of implantation was the flattening of top part of the strain maximum corresponding to the insulating buried layer. This flattening was more distinct for

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Presentation: poster at E-MRS Fall Meeting 2005, Symposium F, by Wojciech Wierzchowski
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-30 19:46
Revised:   2009-06-07 00:44
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