Investigation of insulated buried layers obtained by ion implantation in AlGaAs with various Al concentration
|Wojciech Wierzchowski 2, Krzysztof Wieteska 5, Walter Graeff 1, Grzegorz Gawlik 6, Andrzej Turos 2,3, Arndt Mucklich 4|
1. Hamburger Synchrotronstrahlungslabor HASYLAB (HASYLAB), Notkestrasse 85, Hamburg D-22603, Germany
The important element of modern AlxGa1-xAs semiconductor lasers is an insulating buried layer introduced by selective implantation with He or H ions. The difficulty in obtaining of such layers is connected with controlling of strain and defects introduced by implantation, which may disturb the action of the laser. The strain may be however controlled in less complicated laterally homogenous structures or even single implanted layer.
Presentation: poster at E-MRS Fall Meeting 2005, Symposium F, by Wojciech Wierzchowski
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-30 19:46 Revised: 2009-06-07 00:44
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