Effect of annealing on electrical properties of low temperature ZnO films

Iwona A. Kowalik 1Elżbieta Guziewicz 1Krzysztof Kopalko 1Marek Godlewski 1,2Aleksandra Wójcik 1Victor Osinniy 1Tomasz A. Krajewski 1Tomasz Story 1Marek Guziewicz 3

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Cardinal Stefan Wyszynski University, College of Science, Warszawa, Poland
3. Instytut Technologii Elektronowej (ITE), al. Lotników 32/46, Warszawa 02-668, Poland

Abstract

Last years zinc oxide is extensively studied as prospective materials for electronics (sensors) and optoelectronics. Most of electronic applications like sensors require suitable and controllable electric parameters of ZnO films, like high mobility and low doping concentration. We present results of Hall measurements on zinc oxide thin films grown at low temperature (LT) by Atomic Layer Deposition (ALD) method. In this method reagents (precursors) are introduced sequentially into the growth chamber and cycles when precursors reach the substrate are interspersed by cycles of purging with nitrogen. Because precursors meet only at a surface of the substrate we may use very reactive precursors and may apply different type of chemical reactions (synthesis, single or double exchange).

In the recent study we used double exchange reaction between metal organic diethylzinc and water vapor precursors and applied very low deposition temperature of 100-2000C. Hall coefficient measurements were done on ZnO thin films grown in this way show carrier mobility between 10 and 50 depending on deposition temperature and growth parameters (precursor’s time and purging time). Carrier concentration was at the level of 1019cm-3, which is about two orders of magnitude higher than expected for good quality Schottky contacts. We show that post-grown annealing can considerably improve electrical parameters of LT ZnO films. By low temperature post-growth annealing we managed to reduce free carrier concentration to below 1017cm-3.

 

Related papers
  1. Nanoparticles for medical imaging 
  2. The effect of annealing on properties of Europium doped ZnO nanopowders obtained by a microwave hydrothermal method
  3. Microwave conductivity of ZnO:Co and ZnO:Cu thin films with nano-size metallic Co/Cu inclusions.
  4. Tb3+ ion luminescence enhancement in yttria host lattice obtained via microwave hydrothermal process
  5. Quantum semiconductor nanostructures for applications in biology and medicine -development and commercialisation of new generation devices for molecular diagnostics on the basis of new Polish semiconductor devices
  6. Spin texture of topological crystalline insulator surface states in Pb1-xSnxSe 
  7. Magnetic anisotropy in ferromagnetic (Ge,Mn)Te epitaxial layers with varying Mn content
  8. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  9. Hydrothermal growth of ZnO nanorods for solar cells applications
  10. Epitaxial growth and characterization of zinc oxide nanorods obtained by the hydro-thermal method
  11. Growth of zinc oxide and dielectric films using Atomic Layer Deposition method from organic precursors
  12. Rezonansowe badania fotoemisyjne ferromagnetycznych warstw ZnCoO
  13. Resonant photoemission study of Sm atoms on ZnO surface
  14. Low-temperature expansion of metastable Pb1-xCdxTe solid solution
  15. Mangan w warstwach ZnMnO hodowanych metodą osadzania warstw atomowych
  16. Magnetyczna spektroskopia i spektro-mikroskopia na materiałach spintronicznych
  17. Lokalne otoczenie atomów kobaltu w cienkich warstwach ZnCoO
  18. Contactless electroreflectance of ZnSe layers grown by atomic layer epitaxy
  19. Ferromagnetic transition induced by re-crystallization of amorphous (Ge,Mn)Te layers
  20. Electrical and optical properties of zinc oxide layers obtained by Atomic Layer Deposition
  21. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
  22. Dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by Atomic Layer Deposition
  23. Thin films of ZnS and ZnSe by Atomic Layer Deposition for light sensor applications
  24. Photovoltaic cells based on nickel phthalocyanine and zinc oxide formed by atomic layer deposition
  25. Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition – uniformity of Co distribution, structural, electric and magnetic properties
  26. Effect of annealing on the structure and microstructure of Pr doped ZrO2-Y2O3 nanocrystals
  27. Synthesis of doped ZnO nanopowders in microwave hydrothermal reactors
  28. Synthesis of Al doped ZnO nanopowders and their enhanced luminescence
  29. How we can stimulate intra-shell emissions of rare earth and transition metal ions in thin films and in nanoparticles
  30. ZnO thin films for organic/inorganic heterojunctions
  31. Combining microwave and pressure techniques for hydrothermal synthesis of ZnO and ZrO2 nanopowders doped with a range of metal ions
  32. Luminescence properties of zinc oxide nanopowders doped with Al ions obtained by the hydrothermal and vapour condensation methods.
  33. Gd atoms on Si (111) surface – AFM and photoemission study
  34. Mn 3d electrons in the valence band of Mn/Ge0.9Mn0.1Te- a resonant photoemission study
  35. Wide band-gap II-VI semiconductors for optoelectronic applications
  36. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  37. Water absorption by epitaxial LaNiO3-x thin films
  38. ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.
  39. Low temperature ZnMnO by ALD
  40. Methods of stress investigations in dielectric layer of MIS structures
  41. ZnMnO Films grown by Atomic Layer Deposition with uniform Mn distribution
  42. Characterization of Ir and IrO2 Schottky contacts on n-type 4H-SiC under high temperature stress
  43. Determination of stress in composite engineered substrates for GaN-based RF power devices
  44. Doping of ZnO nanopowders with Mn, Ni and Cr In an ultrasound and microwave driver hydrothermal reaction
  45. Time-resolved ODMR investigations of II-VI based DMS heterostructures
  46. Method of Manganese co-doping of LT ZnO films
  47. Ferromagnetism in ZnO:Mn thin films deposited by PEMOCVD
  48. Photoluminescence of ZnO films studied by femptosecond sapphire:Ti laser
  49. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  50. Two color spectroscopy of ZnSe:Cr
  51. Photo-EPR studies of charge tunneling processes in CdxZn(1-x)Se:Fe,Cr (0 ≤ x ≤ 0.3) crystals
  52. Luminescence of CdMnTe Crystals in Magnetic Field
  53. Luminescence of doped nanoparticles of wide band gap II-VI compounds
  54. Doping of ZnO nanopowders with Mn and Cr in an ultrasound and microwave driven hydrothermal reaction
  55. Ferromagnetic (Eu,Gd)Te/PbTe semiconductor heterostructures
  56. Magnetization study of interlayer exchange in semiconductor EuS-PbS ferromagnetic wedge multilayers
  57. GaN(0001) surface Fe atoms doped
  58. Structural and optical characterization of epitaxial layers of CdTe/PbTe grown on BaF2 (111) substrates
  59. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
  60. Dynamics of spin interactions in II-Mn-VI semiconductors studied with time-resolved optically detected magnetic resonance
  61. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
  62. Fe photoionization transition in ZnSSe:Fe crystals - photo-ESR studies
  63. Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study
  64. In-depth and in-plane profiling of InGaN-based laser diodes and heterostructures
  65. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
  66. Compensation mechanisms in magnesium doped GaN
  67. Optical and magnetic resonance investigations of ZnO crystals doped with transition metal ions
  68. Optical and ODMR study of GaN-based HEMT structures
  69. Photo-ESR and optical studies of Cr photoionization transition in CdZnSe:Cr crystals
  70. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
  71. Luminescent properties of wide bandgap materials at room temperature
  72. Mn doped ZnTe (110) (1x1) surface in Resonant Photoemission study
  73. Differential Reflectivity and Photoemission study of ZnTe and CdTe(110) surface

Presentation: Poster at Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth, by Iwona A. Kowalik
See On-line Journal of Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Submitted: 2007-01-19 17:54
Revised:   2013-02-28 15:04