Photo-ESR and optical studies of Cr photoionization transition in CdZnSe:Cr crystals
|Krzysztof Swiatek 2, Marek Godlewski 2,3, Tanya Surkova 1|
1. Russian Academy of Sciences, Ural Division, Institute of Metal Physics, 18 S.Kovalevskaya str., GSP-170, Ekaterinburg 620219, Russian Federation
Excitation processes of radiative recombination of transition metal ions, which are doped in wide band-gap II-VI semiconductors, are of great interest because of possible application for novel optical devices. Recent studies have shown that the Cr2+ + hν -> Cr1+ + hVB photoionization transitions (hν > 2.2 eV) is an efficient channel for excitation of the Cr2+ intra-ion infra-red emission and laser action in ZnSe:Cr. Since common used semiconductor diode lasers emit light in energy range of 1.9 - 2.0 eV, it is interesting to investigate the same problem in a host system with a bit smaller band gap energy than in case of ZnSe.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Krzysztof Swiatek
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-26 13:22 Revised: 2009-06-08 12:55