Photo-ESR and optical studies of Cr photoionization transition in CdZnSe:Cr crystals

Krzysztof Swiatek 2Marek Godlewski 2,3Tanya Surkova 1

1. Russian Academy of Sciences, Ural Division, Institute of Metal Physics, 18 S.Kovalevskaya str., GSP-170, Ekaterinburg 620219, Russian Federation
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Cardinal Stefan Wyszynski University, College of Science, Warszawa, Poland

Abstract

Excitation processes of radiative recombination of transition metal ions, which are doped in wide band-gap II-VI semiconductors, are of great interest because of possible application for novel optical devices. Recent studies have shown that the Cr2+ + hν -> Cr1+ + hVB photoionization transitions (hν > 2.2 eV) is an efficient channel for excitation of the Cr2+ intra-ion infra-red emission and laser action in ZnSe:Cr. Since common used semiconductor diode lasers emit light in energy range of 1.9 - 2.0 eV, it is interesting to investigate the same problem in a host system with a bit smaller band gap energy than in case of ZnSe.

In this work we study 2+ -> 1+ and 1+ -> 2+ photoionization transitions of chromium ions in CdxZn(1-x)Se:Cr bulk crystals (0=<x=<0.3) in wide temperature range (2 - 300 K). By monitoring changes of the Cr1+ ESR (electron spin resonance) signal under external illumination we are able to determine energies of Cr2+ -> Cr1++ hVB and Cr1+ -> Cr2++ eCB transitions in different CdxZn(1-x)Se host crystals. At low temperature we observe metastable population of photo-excited Cr1+ centers. Free holes created in the valence band (VB) under the 2+ to 1+ ionization of chromium, are efficiently trapped by shallow acceptor centers. We observe also appropriate photoionization bands in low temperature absorption spectra.
Moreover, obtained by us values of the chromium PT energy in CdxZn(1-x)Se agree well with predictions of the universal-level-model and band offsets in CdZnSe/ZnSe heterostructures.

Related papers
  1. Nanoparticles for medical imaging 
  2. The effect of annealing on properties of Europium doped ZnO nanopowders obtained by a microwave hydrothermal method
  3. Microwave conductivity of ZnO:Co and ZnO:Cu thin films with nano-size metallic Co/Cu inclusions.
  4. Tb3+ ion luminescence enhancement in yttria host lattice obtained via microwave hydrothermal process
  5. Quantum semiconductor nanostructures for applications in biology and medicine -development and commercialisation of new generation devices for molecular diagnostics on the basis of new Polish semiconductor devices
  6. Hydrothermal growth of ZnO nanorods for solar cells applications
  7. Epitaxial growth and characterization of zinc oxide nanorods obtained by the hydro-thermal method
  8. Growth of zinc oxide and dielectric films using Atomic Layer Deposition method from organic precursors
  9. Rezonansowe badania fotoemisyjne ferromagnetycznych warstw ZnCoO
  10. Resonant photoemission study of Sm atoms on ZnO surface
  11. Mangan w warstwach ZnMnO hodowanych metodą osadzania warstw atomowych
  12. Lokalne otoczenie atomów kobaltu w cienkich warstwach ZnCoO
  13. Contactless electroreflectance of ZnSe layers grown by atomic layer epitaxy
  14. Electrical and optical properties of zinc oxide layers obtained by Atomic Layer Deposition
  15. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
  16. Dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by Atomic Layer Deposition
  17. Thin films of ZnS and ZnSe by Atomic Layer Deposition for light sensor applications
  18. Photovoltaic cells based on nickel phthalocyanine and zinc oxide formed by atomic layer deposition
  19. Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition – uniformity of Co distribution, structural, electric and magnetic properties
  20. Effect of annealing on the structure and microstructure of Pr doped ZrO2-Y2O3 nanocrystals
  21. Synthesis of doped ZnO nanopowders in microwave hydrothermal reactors
  22. Synthesis of Al doped ZnO nanopowders and their enhanced luminescence
  23. How we can stimulate intra-shell emissions of rare earth and transition metal ions in thin films and in nanoparticles
  24. ZnO thin films for organic/inorganic heterojunctions
  25. Combining microwave and pressure techniques for hydrothermal synthesis of ZnO and ZrO2 nanopowders doped with a range of metal ions
  26. Luminescence properties of zinc oxide nanopowders doped with Al ions obtained by the hydrothermal and vapour condensation methods.
  27. Wide band-gap II-VI semiconductors for optoelectronic applications
  28. Low temperature ZnMnO by ALD
  29. ZnMnO Films grown by Atomic Layer Deposition with uniform Mn distribution
  30. Effect of annealing on electrical properties of low temperature ZnO films
  31. Doping of ZnO nanopowders with Mn, Ni and Cr In an ultrasound and microwave driver hydrothermal reaction
  32. Time-resolved ODMR investigations of II-VI based DMS heterostructures
  33. Method of Manganese co-doping of LT ZnO films
  34. Photoluminescence of ZnO films studied by femptosecond sapphire:Ti laser
  35. Two color spectroscopy of ZnSe:Cr
  36. Photo-EPR studies of charge tunneling processes in CdxZn(1-x)Se:Fe,Cr (0 ≤ x ≤ 0.3) crystals
  37. Luminescence of CdMnTe Crystals in Magnetic Field
  38. Luminescence of doped nanoparticles of wide band gap II-VI compounds
  39. Doping of ZnO nanopowders with Mn and Cr in an ultrasound and microwave driven hydrothermal reaction
  40. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
  41. Dynamics of spin interactions in II-Mn-VI semiconductors studied with time-resolved optically detected magnetic resonance
  42. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
  43. Fe photoionization transition in ZnSSe:Fe crystals - photo-ESR studies
  44. In-depth and in-plane profiling of InGaN-based laser diodes and heterostructures
  45. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
  46. Compensation mechanisms in magnesium doped GaN
  47. Optical and magnetic resonance investigations of ZnO crystals doped with transition metal ions
  48. Optical and ODMR study of GaN-based HEMT structures
  49. Luminescent properties of wide bandgap materials at room temperature

Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Krzysztof Swiatek
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-26 13:22
Revised:   2009-06-08 12:55
Google
 
Web science24.com
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine