Photoluminescence of ZnO films studied by femptosecond sapphire:Ti laser
|George V. Lashkarev 1, Vitalii A. Karpyna 1, Volodymyr Khranovskyy 1, Vasyl Lazorenko 1, Ivan V. Blonsky 2, Igor Dmitruk 2, Petro I. Korenyuk 2, Volodymyr A. Baturin 3, Alexander Karpenko 3, Alexander G. Ulyashin 4, Marek Godlewski 5|
1. Frantsevich Institute for Problems of Materials Science (IPMS), 3, Krzhizhanivsky Str., Kiev 03680, Ukraine
ZnO films were deposited by PEMOCVD, magnetron sputtering (MS) and reactive thermal evaporation on Al2O3 (0001), SiO2/Si (100) and SiNx/Si. Photoluminescence (PL) of as-grown and annealed ZnO films were studied at room temperature in range 350-800 nm by femptosecond sapphire:Ti laser (37 mW, 170 fs, 76 MHz). Annealing of ZnO films was carried out in air at 600-1000oC during 2-9 h.
Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by George V. Lashkarev
See On-line Journal of E-MRS Fall Meeting 2006
Submitted: 2006-05-16 09:17 Revised: 2009-06-07 00:44
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