Dual-acceptor doped p-ZnO:(As+Sb)/n-GaN heterojunctions grown by PA-MBE as a highly selective UV detector

Ewa Przezdziecka ,  Krzysztof Gościński ,  Aleksandra Wierzbicka ,  Marcin Stachowicz ,  Anna Reszka ,  Anna Droba ,  Rafał Jakieła ,  Jacek M. Sajkowski ,  Mieczyslaw A. Pietrzyk ,  A Kozanecki 

Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland


Zinc oxide (ZnO) is a promising candidate for application in ultraviolet (UV) photodetectors due to the large direct band gap and the high absorption coefficient in the UV spectrum range. UV detectors based on wide bandgap semiconductors like SiC, GaN and ZnO have received more and more attention due to their chemical and thermal stability in harsh environments. For applications in p-n diode detectors p-type doping of ZnO is necessary. It is known, however, that it is a difficult task due to the background n-type doping .

High quality dual acceptor doped ZnO:(As,Sb) films were grown on n-type GaN templates by plasma-assisted Molecular Beam Epitaxy (PA-MBE)and p-ZnO/n-GaN heterojunction structures have been fabricated [1]. The structure consists of a 3.5 um thick GaN layer on sapphire substrate covered by a  60 nm thick As and Sb-doped ZnO film. The quality of the heterojunction was examined by X-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM). The As and Sb concentration in ZnO, measured by secondary ion mass spectroscopy (SIMS), is 1x1020 cm-3. The maximum forward-to-reverse current ratio IF/IR in the obtained diode is of about 105 at the applied voltage of  ±4 V, which is a very good result for this type of heterojunction. Electronic properties were examined by XPS study and the presence of As acceptors was also confirmed by low temperature PL study. Photodetector’s response to the pulse of light in the UV region is relatively fast <<1 ms. Photodetectors based on a presented diodes are highly selective (FWHM photocurrent peak ~12 nm), work both in atmospheric pressure and in vacuum.

Fig 1   Cuurent-voltage characteristics ZnO/GaN diodes dark and with UV  illumination.

The research was partially supported by the European Union within European Regional Development Fund, through grant Innovative Economy (POIG.01.01.02-00-008/08).


[1]E. Przeździecka, K. Gościński, M. Stachowicz, D. Dobosz, E. Zielony, J. M. Sajkowski, M. A. Pietrzyk, E. Płaczek-Popko, A. Kozanecki Sensors & Actuators: A. Physical  (2013), pp. 27-31

Related papers
  1. Growth and properties of inclined GaN nanowires on Si(001) substrates by PAMBE
  2. Mechanism of in-plane orientation of GaN self-induced nanowires grown on Si(111) substrates 
  3. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
  4. Modelling of X-Ray diffraction curves for GaN nanowires on Si(111)
  5. Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
  6. Optical Characterisation of Bulk ZnO Crystals Grown by CVT
  7. Physical properties of unique ZnO single crystals from Oława Foundry
  8. MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications 
  9. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  10. Epitaxial growth and characterization of zinc oxide nanorods obtained by the hydro-thermal method
  11. Grown ZnMgO/ZnO/ZnMgO heterostructures on p-type Si(111) by MBE method
  12. Structural, morphological and optical properties of ZnAl2O4 nanoparticles co-doped with Er3+and Yb3+ prepared by combustion aerosol synthesis.
  13. Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE
  14. Resonant photoemission study of Sm atoms on ZnO surface
  15. X-ray photoemission from CdTe/PbTe/CdTe nanostructure in normal and grazing-incidence modes
  16. Investigation of strain and lattice parameters distribution in epitaxial laterally overgrown InGaN/GaN structures 
  17. ZnO and core/shell ZnO/ZnS nanofibers: Characterization and applications
  18. Electrical and optical properties of zinc oxide layers obtained by Atomic Layer Deposition
  19. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
  20. Dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by Atomic Layer Deposition
  21. Transparent p-type ZnO obtained by Ag doping
  22. Gd atoms on Si (111) surface – AFM and photoemission study
  23. Mn 3d electrons in the valence band of Mn/Ge0.9Mn0.1Te- a resonant photoemission study
  24. Optical properties of p-type ZnO:(N, As, Sb)
  25. Optical and magnetooptical properties of the p-type ZnMnO.
  26. Preparation and characterization of hexagonal MnTe and ZnO layers
  27. p-type conducting ZnO: fabrication and characterisation
  28. Energy transfer to Er3+ ions in silicon-rich-silicon-oxide: efficiency lamitations.

Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 3, by Ewa Przezdziecka
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-03-26 14:15
Revised:   2013-07-18 12:05
Web science24.com
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine