Electrical and optical properties of zinc oxide layers obtained by Atomic Layer Deposition

Tomasz A. Krajewski 1Krzysztof Dybko Grzegorz Łuka 1Łukasz Wachnicki 1Bartłomiej S. Witkowski 2Ewa Przezdziecka 1Krzysztof Kopalko 1Marek Godlewski 1,2Elżbieta Guziewicz 1

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Cardinal Stefan Wyszynski University, College of Science, Warszawa, Poland

Abstract

Due to its unique electrical and optical properties, zinc oxide is regarded as a very prospective material in electronic, photovoltaic and optoelectronic applications (including gas sensors, piezoelectric transducers, solar cells and cross-bar memories). All of these applications require stable and controllable in time electrical parameters of obtained zinc oxide thin films, possibly achieved without any post-growth treatment of the deposited ZnO layers.

We present the results of Hall effect measurements on zinc oxide thin films grown at low temperature (LT) by Atomic Layer Deposition (ALD) method using diethylzinc (DEZn) and deionized water as precursors. Our films were deposited at the temperature range between 60°C and 200°C. Electrical parameters of such ZnO layers may be scaled by adjusting the basic growth conditions, such as growth temperature and reciprocal relations between precursors’ pulse/purging times [1]. In this way by introducing slight changes of deposition parameters we are able to obtain ZnO layers with substantially varied n concentration (from 1016 – 1020cm-3) and Hall mobility (up to 100cm2/Vs).

The present investigations’ aim is to examine and compare the changes in electrical and optical parameters of ZnO films after the appropriate measurements performed at low temperature range. The relations between structural, optical, and electrical parameters of zinc oxide films will be shown, provided by composition analysis, cathodoluminescence, pholuminescence and Hall effect measurements. This helps to understand the nature of n type conductivity observed in ZnO thin films.

[1] E. Guziewicz et al. J. Appl. Phys. 103, 033515 (2008)

The research was partially supported by the European Union within European Regional Development Fund, through grant Innovative Economy (POIG.01.01.02-00-008/08).

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Presentation: Poster at E-MRS Fall Meeting 2009, Symposium C, by Tomasz A. Krajewski
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-08 12:19
Revised:   2013-02-28 15:04
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