In-depth and in-plane profiling of InGaN-based laser diodes and heterostructures

Marek Godlewski 1,4Ewa M. Goldys 3Matthew R. Phillips 2

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. University of Technology (UTS), Broadway, Sydney 2007, Australia
3. Division of Information and Communication Sciences, Macquarie University, Sydney, Australia
4. Cardinal Stefan Wyszynski University, College of Science, Warszawa, Poland

Abstract

We employ cathodoluminescence (CL) technique for evaluation of in-depth and in-plane instabilities of light emission in series of InGaN quantum well structures, including laser diode structures. Heteroepitaxial and homoepitaxial InGaN/GaN MOVPE-grown structures are studied. Stimulated emission under electron beam pumping in a conventional CL set up is achieved. We study light emission properties from laser structures and their relation to microstructure details. Large in-plane fluctuations of light emission are also present for excitation densities larger than the threshold densities for the stimulated emission. The latter indicates that potential fluctuations are not fully screened in the active regions of laser structures even at large excitation densities.

This work was partly supported by the grant numbers 5 P03B 007 20, 5 P03B 123 21 of KBN and by the DENIS program of European Union (G5RD-CT-2001-00566).

 

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Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Marek Godlewski
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-27 15:42
Revised:   2013-02-28 15:04