Sensitive InGaAs /InP (SI) magnetic field sensors
|Tomasz R. Przesławski , Andrzej Wolkenberg 1, Kazimierz Regiński , Janusz Kaniewski 1|
1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
On the basis of experimental data, it has been shown that at room temperature undoped n-type MBE In0.53Ga0.47As/InPins as a film (t=4 μ m) with Hall electron mobility μ H=0.7 m2/Vs and carrier concentration nH=2.25 1020 m-3 as well MOCVD In0.53Ga0.47As/InPins (t=2.7 μ m) with μ H=1.2 m2/Vs and nH=1.3 1021 m-3 can be used both for the Hall sensors and magnetoresistive elements. The calculations were performed for the case, that length to width ratio of a sensor (l/w)=1.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Tomasz R. Przesławski
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-06 10:24 Revised: 2009-06-08 12:55