On the basis of experimental data, it has been shown that at room temperature undoped n-type MBE In_0.53Ga_0.47As/InP_ins as a film (t=4 μ m) with Hall electron mobility μ _H=0.7 m²/Vs and carrier concentration n_H=2.25 10²⁰ m^-3 as well MOCVD In_0.53Ga_0.47As/InP_ins (t=2.7 μ m) with μ _H=1.2 m²/Vs and n_H=1.3 10²¹ m^-3 can be used both for the Hall sensors and magnetoresistive elements. The calculations were performed for the case, that length to width ratio of a sensor (l/w)=1.
For the MBE sample the absolute sensitivity γ ₀ defining maximal output voltage of the Hall Sensor (HS) and the current-related sensitivity γ deduced from the measurement results are γ ₀=1.1 VT^-1, γ =5600 Ω T^-1, respectively.We found magnetoresistor current sensitivity S_I~800 Ω T^-1 and voltage sensitivity S_V~0.5 T^-1 for the layer. For the MOCVD sample γ ₀=0.26 VT^-1, γ =1320 Ω T^-1, respectively. We found magnetoresistor current sensitivity S_I~600 Ω T^-1 and voltage sensitivity S_V~0.5 T^-1 for the layer. Similary for 1 μ m thick n_H=8.5 10²³ m^-3, μ _H=0.5 m²/Vs we obtained the values of the parameters γ ₀=0.003 VT^-1, γ =5.6 Ω T^-1 and S_I~1. Ω T^-1, S_V~0.05 T^-1.