Nanostructured layers in high temperature-pressure treated silicon implanted with helium

Barbara Surma 2,3,  Andrzej Misiuk 2,  Vito Raineri 1,  Artur Wnuk 3,  M. Prujszczyk 2,  Andrzej Bukowski 3,4

1. CNR-IMETEM (CNR-IMETEM), Stradale Primosole 50, Catania I-95121, Italy
2. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
3. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
4. CEMAT Silicon, Wólczyńska 133, Warszawa 01-919, Poland

Abstract

Helium- and hydrogen- implanted single crystalline silicon have become of remarkable technological interest because of importance of He- and / or H2- filled microcavities created at annealing in Si:He and Si:H for producing the gettering active areas and for Si wafer splitting (Smart Cut process). The estimated pressure in the He/H2 filled bubbles is in the Giga Pascal (GPa) range [1] and defects of different kind and concentrations are created in annealed Si:He and Si:H. The shear stress at the H/He bubble / Si matrix boundary can be tuned by annealing the Si:H, Si:He and Si:H,He samples under enhanced hydrostatic pressure of inert gas ambient (HT-HP treatment [2]). The HT-HP treatment results, between others, in the decreased strain between the Si matrix and the He- or H -containing nanostructured layers and in creation of more numerous defects in Si:He [2,3]. The effect of HT-HP treatment on Si:He (prepared by Si implantation with He+ at energy, E, up to 300 keV, doses, D, up to '1x1017'cm'{-2}' at up to 1270 K under hydrostatic Ar pressure up to 1.2 GPa was investigated in the present work by photoluminescence (PL), X-Ray, TEM and related methods. Among others it has been stated that enhanced HP at annealing of Fz-Si:He (E = 150 keV, D='2x1016'cm'{-2}' at 1070-1270 K results in modified structure of the buried nanostructured layer promoting creation of dislocations (enhanced intensity of dislocation-related D1 PL line) and point defects clusters. Also the recently obtained results concerning the HT-HP treatment effect on Si:H,He structures will be presented and discussed.
Our investigations are currently supported (at 2002 - 2004) by the Polish Committee for Scientific Research (grant no. 4T08A 03423).

1. Xiang Lu, et al., Appl. Phys. Lett. 71 (1997) 1804.
2. A.Misiuk, et. al., Mater. Phys. Mech. 5 (2002) 31.
3. A.Misiuk, et al., Comput. Mater. Sci. 21 (2001) 515.

Related papers
  1. Structure of Si:Mn annealed under enhanced stress conditions
  2. Gd atoms on Si (111) surface – AFM and photoemission study
  3. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
  4. Substructure of the metal nanomaterials after the intensive external influence
  5. Effect of high pressure annealing on defect structure of GaMnAs
  6. Ultra thin silicon wafers technology for mirror application
  7. Observation of defects in g - irradiated Cz-si annealed under high pressure
  8. Elecrical and optical studies of undoped GaP grown by LEC method
  9. Effect of stress on structural transformations in GaMnAs
  10. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
  11. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  12. Structure and Magnetization of Defect-Associated Sites in Silicon
  13. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  14. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
  15. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
  16. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
  17. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
  18. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
  19. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
  20. Structural and optical properties of high temperature and high pressure treated Si:H,D
  21. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
  22. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
  23. Effect of the DAC treatment on the nanomaterials of type Si-O

Presentation: oral at E-MRS Fall Meeting 2003, Symposium F, by Andrzej Misiuk
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-07 11:02
Revised:   2003-08-21 15:12
Google
 
Web science24.com
© 1998-2008 pielaszek research, all rights reserved Powered by the Conference Engine