We report on the molecular-beam epitaxy growth of ZnTe-based distributed Bragg reflectors (DBRs) and CdTe-based quantum wells on GaSb substrates. The aim is to use these structures as building blocks  for future optoelectronic devices working in the yellow-orange spectral region.

We present details on the growth and discuss the photoluminescence measurements of a series of Zn_xCd_1-xTe quantum wells with varying Zn/Cd ratio and thickness. The well with the highest Cd content exhibits emission at 600 nm at room temperature.

For the DBRs a MgSe/ZnTe/MgTe superlattice (SL) [1] is used as the low refractive index material. The structures were characterized by high resolution X-ray diffraction in order to find a thickness ratio for the SL that allows for lattice matching to the GaSb substrate.

The obtained results pave the way for the realization of a monolithic VCSEL that shows emission in the yellow-orange spectral region.

[1] W. Pacuski et al., Appl. Phys. Lett., 94, 191108 (2009).

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