Growth of ZnTe - based microcavities on GaSb substrates

Tomasz Jakubczyk 1,2Carsten Kruse 2Wojciech Pacuski 1,2Piotr Kossacki 1Detlef Hommel 2

1. University of Warsaw, Faculty of Physics, Institute of Experimental Physics (IFDUW), Hoża 69, Warsaw 00-681, Poland
2. University of Bremen, Institute of Solid State Physics, P.O. Box 330440, Bremen 28334, Germany

Abstract

We report on the molecular-beam epitaxy growth of ZnTe-based distributed Bragg reflectors (DBRs) and CdTe-based quantum wells on GaSb substrates. The aim is to use these structures as building blocks  for future optoelectronic devices working in the yellow-orange spectral region.

We present details on the growth and discuss the photoluminescence measurements of a series of ZnxCd1-xTe quantum wells with varying Zn/Cd ratio and thickness. The well with the highest Cd content exhibits emission at 600 nm at room temperature.

For the DBRs a MgSe/ZnTe/MgTe superlattice (SL) [1] is used as the low refractive index material. The structures were characterized by high resolution X-ray diffraction in order to find a thickness ratio for the SL that allows for lattice matching to the GaSb substrate.

The obtained results pave the way for the realization of a monolithic VCSEL that shows emission in the yellow-orange spectral region.

[1] W. Pacuski et al., Appl. Phys. Lett., 94, 191108 (2009).


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Presentation: Oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 4, by Tomasz Jakubczyk
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-11 17:18
Revised:   2013-04-15 21:20
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