prof Detlef Hommel

e-mail:
fax: +49-421-2184581
web: http://www.ifp.uni-bremen.de
interest(s):

Affiliation:


University of Bremen, Institute of Solid State Physics

address: P.O. Box 330440, Bremen, 28334, Germany
phone: +49 421 218 7453
fax: +49 421 218 4581
web: http://www.ifp.uni-bremen.de

Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

Short wavelength optoelectronics: Status and challenges

Participant:


E-MRS Fall Meeting 2006

began: 2006-09-04
ended: 2006-09-08
Presented:

E-MRS Fall Meeting 2006

CdSe quantum dots and their application in surface emitters and micropillars: A comparison to analogous nitride structures

Participant:


E-MRS Fall Meeting 2009

began: 2010-09-14
ended: 2010-09-18
Presented:

Publications:


  1. Catalyst- and mask-free grown GaN nanocolumns
  2. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
  3. CdSe quantum dots and their application in surface emitters and micropillars: A comparison to analogous nitride structures
  4. Characterization of Growth Defects in GaN Layers withX-ray Microbeam
  5. Critical exponents of dilute ferromagnetic semiconductors (Ga,Mn)N and (Ga,Mn)As
  6. Growth and doping of (Ga,Mn)N epitaxial films
  7. Growth of ZnTe - based microcavities on GaSb substrates
  8. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
  9. New concepts for ZnTe-based microcavities
  10. Characterization of chrystallographic properties and defects via X-ray microdiffraction in GaN(0001) layers

  11. Short wavelength optoelectronics: Status and challenges
  12. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  13. ZnSe-based laser diodes: New approaches for longer lifetimes



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