E-MRS Fall Meeting 2004

 on-line journal

No.
Presenting person
Title
C-01 Asghar Asgari Tokaldani Theoretical model of transport characteristics of AlGaN/GaN High electron mobility transistors
C-02 Hong-Ying Chen Argon ion beam voltages influence the changes of microstructure and chemical composition of aluminum nitride films in dual ion beam sputtering system
C-03 Vitalij G. Deibuk Charge transfer and thermodynamic stability of ternary nitride solid solutions
C-05 Janusz Karpinski Al_xGa_{1-x}N bulk single crystals: Temperature dependence of Al solubility
C-06 Marek Godlewski Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
C-07 Min Gong Annealing Behaviors of Void-like Defects in SiO_2/SiC Probed by Slow-Positron-Beam
C-08 Lucja Gorczyca Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
C-09 Barbara Kalandyk Microstructure Strength Relationship in Microalloyed Cast Steels
C-10 Eliana Kaminska Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
C-11 Eliana Kaminska TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
C-12 Michal Kaminski GaN growth by Sublimation Sandwich Method
C-13 Krzysztof P. Korona Recombination Dynamics in GaN/AlGaN Low Dimensional Structures Obtained by SiH_4 Treatment
C-14 Iwona A. Kowalik Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study
C-15 Krzysztof PakuĊ‚a Spontaneous Superlattice Formation in MOCVD Growth of AlGaN
C-16 Yong Seob Park HARDNESS AND LUBRICATION PROPERTIES OF CN_X THIN FILMS GROWN BY CLOSE FIELD UNBALANCED MAGNETRON SPUTTERING
C-17 Matthieu PETIT Nitridation of InP(100) surfaces studied by synchrotron radiation
C-18 J. O. Schmitt Close-Spaced Crystal Growth and Characterization of BP Crystals
C-19 Tomasz Wojtowicz The atomic structure of defects formed during doping of GaN with rare earth ions
C-20 Tomasz Wojtowicz Transmission electron microscopy structural investigations of Tm implanted GaN
C-21 Thomas Wolff Automated Electrochemical CV-Profiling of semiconductor structures on wafer scale
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