E-MRS Fall Meeting 2004

 on-line journal

Time
Duration
Type
Presenting person
Title

September 7th, Tuesday

14:00 00:45:00 invited oral Marie-Antoinette di Forte-Poisson MOCVD growth of Group III Nitrides for high power, high frequency applications.
14:45 00:45:00 invited oral Thomas Zettler Optical in-situ monitoring of III-Nitride epitaxial growth
16:00 00:20:00 oral M. B. Charles Methods of Stress Reduction in the MOCVD Epitaxial Growth of GaN on Silicon
16:20 00:20:00 oral Anelia Kakanakova Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system
16:40 00:20:00 oral Gowtham Manoharan A New Single layer antireflection coating on PET substrates for the Display applications

September 8th, Wednesday

09:00 00:45:00 invited oral Jean-Yves Duboz solar blind detectors based on AlGaN grown on sapphire
09:45 00:45:00 invited oral Martin Eickhoff Properties and Applications of Group-III-Nitrides Solution-Gate Field-Effect Transistors
11:00 00:20:00 oral Wlodek Strupinski Electrical Properties of GaN/AlGaN Hetrostructures
11:20 00:20:00 oral Grzegorz Jurczak Modeling of elastic, piezoelectric and optical properties of vertically correlated GaN/AlN quantum dots
11:40 00:20:00 oral Bojan Karunagaran Low Temperature Deposition of Silicon Nitride Layers by Plasma Enhanced CVD For Large Area High Efficiency MC-Si Solar Cells
14:00 00:45:00 invited oral Juergen H. Christen Cathodoluminescence Microscopy of Nitrides
14:45 00:45:00 invited oral Fernando Calle Nitride-based Surface Acoustic Waves Devices and Applications
16:00 00:20:00 oral Wojtek J. Walecki Novel Noncontact Thickness Metrology for Backend Manufacturing of Wide Bandgap Light Emitting Devices
16:20 00:20:00 oral Lech Dobrzanski The p-i-n photo detectors for UVA and UVB regions made of GaN/AlGaN
16:40 00:20:00 oral Akihiko Kikuchi Room temperature stimulated emission from self-organized GaN nano-columns grown on (111) Si substrate
17:00 00:20:00 oral Thomas Wolff Electrochemical Etching and CV-Profiling of GaN

September 9th, Thursday

09:00 00:45:00 invited oral Shuji Nakamura GaN Crystal Growth and Light Emitting Devices
09:45 00:45:00 invited oral Jacek Jasiński "Classic" and Novel Methods of Dislocation Reduction in Heteroepitaxial Nitride Layers
11:00 00:20:00 oral Kestutis Jarasiunas Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN
11:20 00:20:00 oral Barbara Chwalisz Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells
11:40 00:20:00 oral Fabrizio R. Giorgetta Resonant tunneling and intersubband absorption in AlN-GaN-superlattices
14:00 00:45:00 invited oral Bo Monemar Characterisation of GaN grown by HVPE
14:45 00:20:00 oral Aneta Drabińska Electroreflectance and photoreflectance studies of AlGaN/GaN heterostructure with a QW placed inside AlGaN layer
15:05 00:20:00 oral Gijs Franssen Built-in electric fields in group III-nitride light emitting quantum structures
16:00 00:20:00 oral Karolis Kazlauskas Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells
16:20 00:20:00 oral Pawel Trautman The fundamental absorption edge of high crystalline quality GaN and that of amorphous GaN grown at low temperature
16:40 00:20:00 oral Marcin Sarzynski Bowing of epitaxial structures grown on bulk GaN substrates
17:00 00:20:00 oral Maciej Wojdak Study of photo- and electro-luminescence related with Er^{3+} ions in GaN:Er

September 10th, Friday

09:00 00:45:00 invited oral David C. Look Giant traps in GaN and SiC: nanopores and dislocations
09:45 00:45:00 invited oral Jacek A. Majewski Nitrides for Spintronics - Magnetic Moments and Spin Lifetimes in Nitrides
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