Spontaneous Superlattice Formation in MOCVD Growth of AlGaN
|Krzysztof Pakuła 1, Rafał Bożek 1, Elżbieta Rohozinska-Zielinska 1, Jacek Jasiński 2, Jacek Baranowski 1,3|
1. Warsaw University, Faculty of Physics, Hoża 69, Warszawa 00-681, Poland
It has been found that AlGaN layers grown by MOCVD on sapphire substrates form superlattice (SL) along growth direction. Transmission electron microscopy (TEM), high resolution X-ray diffraction and atomic force microscopy (AFM) found the phenomenon. The amount of Al in AlGaN layer oscillates between a few percent to about 50%, thus by about one order of magnitude. The period of oscillations range from 30 nm to 50 nm depending on the growth condition. TEM and AFM reveal a homogenous lateral distribution of the SL. The vertical extension covers the total layer thickness.
Presentation: poster at E-MRS Fall Meeting 2004, Symposium C, by Krzysztof Pakuła
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-05-21 14:20 Revised: 2009-06-08 12:55