X-Ray diffraction studies of radiation defects in CdTe single crystals and epitaxial layers

Oleksandr Y. Bonchyk 1Andrij P. Vlasov 2Igor M. Fodchuk 4Ruslan M. Zaplitnyy 4Zbignew T. Swiatek 3

1. Institute of Applied Problems of Mechanics and Mathematics (IAPMM), 3B Naukova Str., Lviv 79060, Ukraine
2. Ivan Franko National University, 50 Dragomanov Str., Lviv, Ukraine
3. Polish Academy of Sciences, Institute of Metallurgy and Materials Sciences (IMIM PAN), Reymonta 25, Kraków 30-059, Poland
4. Chernivtsi National University (ChNU), 2 Kotsubinsky Str., Chernivtsi 58012, Ukraine

Abstract

The report investigates the influence of radiation defects, formed in near-surface regions of CdTe after As ion implantation, on the high temperature doping and ISOVPE growth of CdXHg1-XTe epitaxial layers.For experiments, the undoped CdTe single crystals of (111) orientation and epitaxial layers on their basis with the surface source of dopant produced by As ion implantation were used. The structure of both CdTe ion implanted surfaces after high temperature annealing and CdXHg1-XTe epitaxial layers grown on those substrates has been studied.The X-ray spectrometry single and double-crystal techniques in symmetric, asymmetric and skew-asymmetric geometry of sample placement have been used. Structural changes in both rocking curves and X-ray topograms obtained at different angles of azimuth scanning have been revealed. On the basis of a semi-kinematic and dynamical theory of X-ray diffraction the computer simulations of strain and distortion distributions in material after applied technological processes were performed. For a given distribution of deformations the rocking curve were calculated and compared with the experimental one.

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Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Oleksandr Y. Bonchyk
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-27 13:30
Revised:   2009-06-08 12:55
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