Interface dynamics of melt instabilities on semiconductor surfaces

Pawel S. Zieba 2,  Bogdan Datsko 1,  Vitaliy Meleshko 1,  Ivan Mohylyak 1,  Zbignew T. Swiatek 2,  Lidia Lityńska-Dobrzyńska 2

1. Institute of Applied Problems of Mechanics and Mathematics (IAPMM), 3B Naukova Str., Lviv 79060, Ukraine
2. Polish Academy of Sciences, Institute of Metallurgy and Materials Sciences (IMIM PAN), Reymonta 25, Kraków 30-059, Poland

Abstract
The processes that take place in the pulsed laser radiation of semiconductors are essentially non-equilibrium, which causes appearance of new physical phenomena. The nonuniform temperature fields define the peculiarities of melting processes and semiconductors surface relief in the zones of light flux action. At uniform excitation of semiconductors by laser radiation with prethreshold power the locally melted region are formed on irradiated surfaces. It is induced by thermo diffusive instability of distribution of uniformly generated EHP. Therewith the forms of locally melted region give rise to a great variety of interesting patterns. The realization of instability during the melt processes on the interface within a wide interval of wave numbers and the essential instability of the whole process of shaping and next to the reproduction of self similar forms on the interface in smaller scales can by described within the framework of the problem of Laplacian growth. The mathematical model to the surface dynamics, when the instability of the front of melt arises along a chosen wave vector, is proposed. The results of computer simulation of interface dynamics of solitary melted region on the base of this mathematical model fit the experimental data and indicate the fractal character of their formation.
Presentation: Poster at E-MRS Fall Meeting 2006, Symposium H, by Pawel S. Zieba
See On-line Journal of E-MRS Fall Meeting 2006
Submitted: 2006-05-23 10:01
Revised:   2006-05-24 10:38
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