E-MRS Fall Meeting 2005

 on-line journal

Time
Duration
Type
Presenting person
Title

September 5th, Monday

14:00 00:30:00 invited oral Joerg Neugebauer

Ab initio based multiscale simulations of dislocations in GaN

14:30 00:15:00 oral Imad Belabbas

Ab-initio tight-binding study of the core structures of the c edge dislocation in wurtzite GaN

14:45 00:15:00 oral Joseph Kioseoglou

Partial dislocation core distribution in GaN using high resolution transmission electron microscopy

15:00 00:15:00 oral Gerard Nouet

The atomic configuration of tilt grain boundaries around <0001> in GaN

September 6th, Tuesday

09:15 00:15:00 oral Florence Gloux

Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications

09:30 00:15:00 oral Eleftherios Iliopoulos

Biaxial strain and Poisson ratio in InN films grown heteroepitaxially on GaN(0001) by plasma assisted molecular beam epitaxy

09:45 00:15:00 oral Zhe C. Feng

Properties of the CdTe/InSb Interface Studied by Optical and Surface Analytical Techniques

10:00 00:15:00 oral Pierre Ruterana

Interfacial diffusion and precipitation in rf magnetron sputtered Mn doped ZnO layers

14:00 00:30:00 invited oral Isabelle Devos

Interfaces between a polar high-k perovskite and silicon

14:30 00:15:00 oral S. J. Wang

Band alignment at metal-gate/high-k/semiconductor interfaces

14:45 00:15:00 oral Patrick S. Lysaght

Spectroscopic analysis of thin HfO2 and HfSiOx gate dielectric thin films exposed to NH3 anneal processing

15:00 00:15:00 oral Kunyuan Gao

The interface of atomic layer deposited Al2O3 on silicon

15:15 00:15:00 oral Michał Ćwil

Si-oxide and Si-oxynitride interfaces analysed by ultra-low energy SIMS

15:50 00:30:00 invited oral Kathrin Dorr

Strain and charge modulation in multiferroic manganite - titanate film systems

16:20 00:15:00 invited oral Jean-Luc Maurice

Chemical bonding and electronic structure at hetero-interfaces: the case of perovskite oxides

16:35 00:15:00 oral Kris J. Hameeuw

The influence of defects on the surface behavior of TiO2

16:50 00:15:00 oral Alexander Axelevitch

Electrical Transport Mechanism in VO2 Thin Films

17:05 00:15:00 oral Mohammad R. Benam

First principle calculation of the effect of IIIB transition metals impurities on the energy gap of α-Al2O3

September 7th, Wednesday

09:00 00:15:00 oral Wojciech Szuszkiewicz

Promising high quality short period Fe/Fe-N multilayers deposited by the sputtering

09:15 00:15:00 oral Jyotsna Dutta Majumdar

Laser assisted fabrication of Co on Ti for bio-implant application

09:30 00:15:00 oral Paweł Dłużewski

A hybrid atomistic-continuum finite element modelling of locally disordered crystalline structure

09:45 00:15:00 oral Witold Łojkowski

Prediction of degree of localisation of misfit dislocation cores in intercrystalline interfaces based on interfacial adhesion

10:00 00:15:00 oral Syamak Hossein Nedjad

High resolution transmission electron microscopy study on the nano-scale twining of θ-NiMn precipitates in Fe-Ni-Mn maraging alloy

14:00 00:15:00 oral Horia Alexandru

INTERFACE KINETIC IN CRYSTAL GROWTH FROM SOLUTIONS

14:15 00:15:00 oral Ingrida Bruzaite

Deposition of nanostructured thallium sulfide layers on organic and inorganic surfaces in a solution of higher polythionic acid

14:30 00:15:00 oral Sonia De Angelis

IN SITU ETCHING TREATMENTS OF EPITAXIAL LAYER BY USING DIFFERENT GAS COMPOSITION FOR MORPHOLOGICAL QUALITY IMPROVEMENT OF THE SURFACES.

14:45 00:15:00 oral Emilia V. Pecheva

Patterning of Surfaces by Polysilicon for Inducing Hydroxyapatite Growth by Laser-Liquid-Solid Interaction

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