Eleftherios Iliopoulos

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Affiliation:


Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, and University of Crete, Physics Department

address: , Heraklion, 71110, Greece
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Participant:


E-MRS Fall Meeting 2005

began: 2005-09-05
ended: 2005-09-09
Presented:

E-MRS Fall Meeting 2005

InGaN and InAlN alloys grown in the entire composition range by plasma assisted molecular beam epitaxy


E-MRS Fall Meeting 2005

Biaxial strain and Poisson ratio in InN films grown heteroepitaxially on GaN(0001) by plasma assisted molecular beam epitaxy


Publications:


  1. Biaxial strain and Poisson ratio in InN films grown heteroepitaxially on GaN(0001) by plasma assisted molecular beam epitaxy

  2. InGaN and InAlN alloys grown in the entire composition range by plasma assisted molecular beam epitaxy

  3. Properties of MBE-grown InN (0001) films

  4. Study of the influence of crystal orientation and bond polarity on the potentiometric response of III-N surfaces
  5. Thickness dependence of electrical properties of c- and a-plane InN films  



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