Joseph Kioseoglou

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Affiliation:


Dept. of Physics, Aristotle University of Thessaloniki, 54 124 Thessaloniki, Greece

address: , Thessaloniki, 54 124, Greece
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Participant:


E-MRS Fall Meeting 2005

began: 2005-09-05
ended: 2005-09-09
Presented:

E-MRS Fall Meeting 2005

Partial dislocation core distribution in GaN using high resolution transmission electron microscopy


Publications:


  1. Microstructure of InN grown on Si (111) by plasma-assisted MBE using a double buffer layer
  2. Partial dislocation core distribution in GaN using high resolution transmission electron microscopy

  3. Structural properties of quaternary InAlGaN MQWs grown by plasma-assisted MBE

  4. Study of partial dislocations in wurtzite GaN using gradient elasticity

  5. Structural models of GaN quantum dots in semipolar AlN
  6. The (10-10)/(2-1-12) grain boundary in nonpolar GaN:Atomic structure and influence on defect introduction



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