E-MRS Fall Meeting 2005

 on-line journal

No.
Presenting person
Title
A-1 Zhifeng Wei

Anomalous Temperature Dependence of Photoluminescence of Self-assembled InGaAsN Quantum Dots

A-2 Louis F. J. Piper

InN explained within chemical trends

A-3 Munise Rakel

Conduction band anisotropy of InN and GaN studied by synchrotron ellipsometry

A-4 Bachir Bouhafs

Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN

A-5 Hiroshi Miwa

Scanning near-field optical microscopy (SNOM) analysis of MOVPE InN

A-6 Marcin Motyka

Contactless electroreflectance spectroscopy of InN layers grown by MBE

A-7 Pierre Ruterana

Investigation of InN layers grown by MOCVD and MBE using analytical and high resolution TEM

A-8 Takahiro Kobayashi

A comparative study on MOVPE InN films grown on 3c-SiC/Si(111) and sapphire substrates

A-9 Akio Yamamoto

Growth of N-polarity InN by ArF-laser assisted MOVPE

A-10 Pawel Kempisty

Mass flow and reaction analysis of the growth of GaN layers by HVPE

A-11 Christoph Cobet

Optical properties of InN films and the influence of surface contaminations

A-12 Oleksandr N. Yefanov

Investigation of Deformation Fields Anisotropy in Multilayered (In,Ga)As/GaAs Structures with Quantum Wires by HRXRD.

A-13 Roman Minikayev

Rietveld refinement for polycrystalline indium nitride

A-14 Wojciech Paszkowicz

LATTICE PARAMETERS OF INDIUM NITRIDE IN THE 22-310 K TEMPERATURE RANGE

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