Electrical Transport Mechanism in VO2 Thin Films

Alexander Axelevitch 1Boris Gorenstein Boris Sigalov Gady Golan 

1. Holon Academic Institute of Technology (HAIT), 52 Golomb St., Holon 58102, Israel

Abstract

Vanadium oxide (VO2) is a material with “smart” properties. This material transforms from semiconductor to a metal state at the temperature of 67 0C. All its electrical and optical properties dramatically change while transformation. Current technologies are using such "smart" materials in order to develop optical switching devices, electro-optical sensors and displays. VO2 thin film systems, deposited by various methods, are most often applied for these "smart" applications.
This paper presents the investigation and experimental results of the optical and electrical properties of vanadium oxide thin films deposited by vacuum thermal evaporation on various dielectric substrates. We have studied the electro-physical behavior of these films during their phase transition. It was shown that the electrical transport mechanism of the obtained vanadium oxide films differs in low and high electrical fields. In low electrical fields, conductivity is obtained by the Schottky transport mechanism, whereas in high electrical fields conductivity ranges from Ohmic mechanism for low fields, to Poole-Frenkel for higher fields. FTIR, NIR and visible optical characteristics of the obtained films, were studied as well.

Presentation: oral at E-MRS Fall Meeting 2005, Symposium F, by Alexander Axelevitch
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-29 07:30
Revised:   2009-06-07 00:44
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