E-MRS Fall Meeting 2005

 on-line journal

Time
Duration
Type
Presenting person
Title

September 5th, Monday

14:00 00:30:00 invited oral Akihiko Yoshikawa

Epitaxy Control and Characterization of InN, InN-based Ternary Alloys, and Their MQW-structures

14:30 00:30:00 invited oral David J. Smith

Determination of concentration, strain and internal electric fields in InN and InGaN quantum well and quantum dot structures

15:00 00:30:00 invited oral Euijoon Yoon

Ultra-thin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

September 6th, Tuesday

09:00 00:30:00 invited oral Wladek Walukiewicz

Band Structure and Properties of InN and In-rich In1-xGaxN Alloys

09:30 00:15:00 oral Louis F. J. Piper

Valence band structure of InN from x-ray photoemission studies

09:45 00:15:00 oral Jebreel M. Khoshman Band Gap Energy of a-InN Thin Films
10:00 00:30:00 invited oral Tatiana V. Shubina

Plasmonic effects in InN-based structures with nano-clusters of metallic indium

14:00 00:30:00 invited oral Friedhelm Bechstedt

Dielectric function of InN: Nonparabolicity and excitonic effects

14:30 00:30:00 invited oral Petra Specht

Band transitions in the InGaN system

15:00 00:30:00 invited oral Dimiter Alexandrov

Electron band structure and optical properties of InN and related alloys

15:50 00:30:00 invited oral Ruediger Goldhahn

Optical anisotropy of InN from near-IR to deep-UV

16:20 00:30:00 invited oral Su-Huai Wei

THEORETICAL INVESTIGATION OF THE InN BAND GAP ANOMALY

September 7th, Wednesday

09:00 00:30:00 invited oral Tadeusz Suski

Localized donor states resonant with the conduction band in InN and GaN

09:30 00:15:00 oral Volker Cimalla

Surface band bending at n-type and p-type InN by Auger Electron Spectroscopy

09:45 00:15:00 oral Phillip A. Anderson

Multiple photoluminescence peaks from mixed-phase indium nitride thin films

10:00 00:30:00 invited oral Albert A. Klochikhin

Acceptor states in photluminescence of n-InN

14:00 00:30:00 invited oral K. Scott A. Butcher

Stoichiometry related point defects in InN

14:30 00:15:00 oral Evgenia Valcheva

Recombination processes with and without momentum conservation in degenerate InN

14:45 00:15:00 oral Takashi Inushima

Superconductivity of InN

15:00 00:30:00 invited oral Tim Veal

Quantized Electron Accumulation, Inversion Layers and Fermi Level-Stabilization in Indium Nitride

15:50 00:30:00 invited oral Hiroyuki Naoi

Growth and properties of InN, InGaN, and InN/InGaN quantum wells

16:20 00:15:00 oral Eleftherios Iliopoulos

InGaN and InAlN alloys grown in the entire composition range by plasma assisted molecular beam epitaxy

16:35 00:30:00 invited oral Phillip A. Anderson

RF plasma sources for III-nitrides growth: influence of operating conditions and device geometry on active species production and InN film properties

17:05 00:15:00 oral Emmanouil Dimakis

Properties of MBE-grown InN (0001) films

17:20 00:30:00 invited oral Massimo Drago

MOVPE growth of InN on Sapphire

September 8th, Thursday

09:00 00:30:00 invited oral Akio Yamamoto

Inhomogeneities in MOVPE InN

09:30 00:30:00 invited oral Vladislav Y. Malakhov

InN Polycrystalline Films: Growth, Structure and Optical Characterization

10:00 00:30:00 invited oral Olga Kryliouk

Single crystalline InN nanorods by H-MOVPE

11:00 00:15:00 oral Rozaliya I. Barabash

Characterization of chrystallographic properties and defects via X-ray microdiffraction in GaN(0001) layers

11:15 00:15:00 oral Hamid Haratizadeh

Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells

11:30 00:15:00 oral Andreas Delimitis

Structural and optical characterization of thick InN epilayers grown on GaN templates by plasma assisted molecular beam epitaxy

11:45 00:30:00 invited oral Zuzanna Lilental-Weber

Compositional modulation in the InxGa1-xN layers; relation to their optical properties

14:00 00:30:00 invited oral Colin J. Humphreys

Does electron microscopy produce In clustering in InGaN?

14:30 00:30:00 invited oral Pierre Ruterana

Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM

15:00 00:30:00 invited oral Christian Kisielowski

Quantitative Electron Microscopy of the InN-GaN Ternary Alloy System

15:50 00:30:00 invited oral Paweł Dłużewski

Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs

16:20 00:30:00 invited oral Andreas Rosenauer

Strain state analysis of InGaN/GaN – sources of error and optimized imaging conditions

16:50 00:30:00 invited oral Marie-Antoinette Poisson

III-Nitrides semiconductor compounds for microwave devices

17:20 00:30:00 invited oral William A. Doolittle

Indium Nitride: A Material with Photovoltaic Promise and Challenges

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