Biaxial strain and Poisson ratio in InN films grown heteroepitaxially on GaN(0001) by plasma assisted molecular beam epitaxy
|Eleftherios Iliopoulos , Emmanouil Dimakis , Katerina Tsagaraki , Alexandros Georgakilas|
Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, and University of Crete, Physics Department (MRG), Heraklion 71110, Greece
InN (0001) films were grown heteroepitaxially on GaN/Al2O3 by radiofrequency plasma assisted molecular beam epitaxy (RF-MBE). The growth conditions and the layers’ thicknesses were systematically varied resulting in different strain levels in the films. High resolution x-ray diffraction (HR-XRD) was employed to study their structural properties.
Presentation: oral at E-MRS Fall Meeting 2005, Symposium F, by Eleftherios Iliopoulos
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-20 20:10 Revised: 2009-06-07 00:44