Investigation of Deformation Fields Anisotropy in Multilayered (In,Ga)As/GaAs Structures with Quantum Wires by HRXRD.

Oleksandr N. Yefanov 1Vasyl P. Kladko 1O Y. Gudymenko 1V V. Strelchuk 1Yu I. Mazur Zh V. Wang 2G. J. Salamo 

1. V.Lashkaryov Institute of Semiconductor Physics NAS Ukraine (ISP), Nauky prosp., Kyiv 03028, Ukraine
2. University of Arkansas, Fayetteville, AR 72701, United States

Abstract

The results of investigation of In0.3Ga0.7As/GaAs superlattices with quantum wires by High-Resolution X-Ray Scattering are presented. The influence of lattice distortion on rocking curves (RC) was analyzed with dynamical theory of diffraction. It allowed explaining azimuth dependence of experimental rocking curves. Anisotropic changes in the shape of InGaAs lattice unit cell were shown and measured.
The influence of smooth borders between hetero-layers was analyzed. Comparative analysis of influence of different gradient functions in the hetero-border on rocking curves was done. Parameters of hetero-interfaces in our samples were determined with the help of RC modeling.
The influence of shot time annealing (30sec) with different temperatures on quantum wires was observed. Increasing of lateral mass transfer with increasing of annealing temperature was observed.
If smooth hetero-interface and anisotropic distortions in unit cell are not considered, wrong determination of structure parameters (both period of superlattice and ratio of layers thicknesses) may occur.
The result obtained allowed us to find the regularity in structure changes under the influence of annealing and to investigate features of elastic deformations relaxation in space ordered InGaAs quantum wires. It is very important for quantum-size objects physical properties understanding.

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Presentation: poster at E-MRS Fall Meeting 2005, Symposium A, by Oleksandr N. Yefanov
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-30 15:15
Revised:   2009-06-07 00:44
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