Study of photo- and electro-luminescence related with Er3+ ions in GaN:Er
|Maciej Wojdak 2, Alain Braud 2, Jean Louis Doualan 2, Richard Moncorgé 2, Tomasz Wojtowicz 3, Pierre Ruterana 3, Philippe MARIE 3, Alban Colder 3, Hock Min Ng 1|
1. Lucent Technologies Bell Laboratories (Bell Labs), 600 Mountain Avenue, Murray Hill, NJ 07974, United States
Semiconductors doped with erbium are attractive materials for optoelectronic devices due to the fact that characteristic Er3+ emissions meet technologically important spectral ranges, and semiconductor host provides the possibility of electrical excitation. Due to low thermal quenching of erbium luminescence, GaN:Er was recently extensively studied and devices based on this material were demonstrated. However, the optimization of the emission requires a better understanding of the excitation mechanisms.
Presentation: oral at E-MRS Fall Meeting 2004, Symposium C, by Maciej Wojdak
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-04-28 15:19 Revised: 2009-06-08 12:55