Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By using the laser lift off (LLO) technique followed by an anisotropic etching process to roughen the surface, an n-side up GaN-based LED with a hexagonal "cone-like" surface has been fabricated. The enhancement of the LED output power depends on the surface conditions. The output power of an optimally roughened surface LED showed a two to three-fold increase compared to that of an LED before roughening.
Nonpolar A- or M-plain GaN has been grown by hydride vapor phase epitaxy (HVPE). Using a lateral epitaxial overgrowth (LEO), an uniform mirror-like surface has been obtained. The device perforamnce grown on nonpolar GaN templates will be described.

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