GaN Crystal Growth and Light Emitting Devices

Shuji Nakamura 

University of California, College of Engineering, -, Santa Barbara, CA 93106-5130, United States


Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By using the laser lift off (LLO) technique followed by an anisotropic etching process to roughen the surface, an n-side up GaN-based LED with a hexagonal "cone-like" surface has been fabricated. The enhancement of the LED output power depends on the surface conditions. The output power of an optimally roughened surface LED showed a two to three-fold increase compared to that of an LED before roughening.
Nonpolar A- or M-plain GaN has been grown by hydride vapor phase epitaxy (HVPE). Using a lateral epitaxial overgrowth (LEO), an uniform mirror-like surface has been obtained. The device perforamnce grown on nonpolar GaN templates will be described.


Related papers
  1. Recent Performance of Nonpolar/Semipolar/Polar GaN-based Blue LEDs/LDs and Bulk GaN Crystal Growth
  2. Ammonothermal Growth of Bulk GaN for Extended Time

Presentation: invited oral at E-MRS Fall Meeting 2004, Symposium C, by Shuji Nakamura
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-05-21 15:53
Revised:   2009-06-08 12:55