GaN Crystal Growth and Light Emitting Devices
University of California, College of Engineering, -, Santa Barbara, CA 93106-5130, United States
Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By using the laser lift off (LLO) technique followed by an anisotropic etching process to roughen the surface, an n-side up GaN-based LED with a hexagonal "cone-like" surface has been fabricated. The enhancement of the LED output power depends on the surface conditions. The output power of an optimally roughened surface LED showed a two to three-fold increase compared to that of an LED before roughening.
Presentation: invited oral at E-MRS Fall Meeting 2004, Symposium C, by Shuji Nakamura
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-05-21 15:53 Revised: 2009-06-08 12:55