Wlodek Strupinski

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interest(s):

Affiliation:


Institute of Electronic Materials Technology

address: Wólczyńska 133, Warszawa, 01-919, Poland
phone: 22 835 30 41
fax: 22 834 90 03
web: http://www.itme.edu.pl

Participant:


E-MRS Fall Meeting 2004

began: 2004-09-06
ended: 2004-09-10
Presented:

E-MRS Fall Meeting 2004

Electrical Properties of GaN/AlGaN Hetrostructures

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

CVD of graphene on SiC

Publications:


  1. CVD of graphene on SiC
  2. Electrical Properties of GaN/AlGaN Hetrostructures
  3. GaN growth by Sublimation Sandwich Method
  4. Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations
  5. Growth of high resistivity GaN layers by compensating defects generation
  6. Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE
  7. MOCVD growth and characterization of ultrathin AlN/GaN superlattices on 0001 sapphire substrates
  8. Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures
  9. Pinned and unpinned epitaxial and sublimated graphene on SiC
  10. Problems with cracking of Al_xGa_1_-_xN layers
  11. Raman spectroscopy of single and multilayer graphene on SiC substrates
  12. Synthesis of gallium nitride nanowires by Sublimation Sandwich Method
  13. The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates
  14. Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates



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