Electrical Properties of GaN/AlGaN Hetrostructures

Wlodek Strupinski 1Dariusz Lenkiewicz 1Ewa Dumiszewska 1Marek Wesołowski 1Agata Jasik 1Rafał Jakieła 1,2

1. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland

Abstract

GaN and AlGaN electrical transport properties were investigated in undoped and intentionally doped layers using Hall measurements. GaN/AlGaN films grown by MOCVD exhibited strong variations in resistivity as a result of changing MOCVD growth conditions in controlled experiments. The explanation of high compensation in GaN is connected to carbon impurity acting as a acceptor, substitutional oxygen predicted to act as donor, association of threading dislocations with charge centers, gallium vacancies and VGa-O complexes (deep acceptors). In our experiments we tried to recognize the most efficient source of n- and p-type carriers in undoped GaN and mechanisms of compensation by impurities and defects creation. The influence of AlGaN defects structure, with various Al content, on GaN electrical properties was examined detailed. Highly resistive and highly conductive GaN films were produced as a result of our investigations. GaN/AlGaN structures were applied for HEMTs and photodetectors.

 

Related papers
  1. (Cd, Mn)Te Crystals for X and Gamma Radiation Detectors - an Alternative Material to CdTe and (Cd,Zn)Te. 
  2. The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates
  3. CVD of graphene on SiC
  4. Growth of SiC by PVT method with different sources of the cerium impurity, CeO2 or CeSi2
  5. The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
  6. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  7. Pinned and unpinned epitaxial and sublimated graphene on SiC
  8. Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
  9. Synthesis of gallium nitride nanowires by Sublimation Sandwich Method
  10. Raman spectroscopy of single and multilayer graphene on SiC substrates
  11. Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations
  12. Thick GaN layers on sapphire with various buffer layers
  13. Growth of high resistivity GaN layers by compensating defects generation
  14. MOCVD growth and characterization of ultrathin AlN/GaN superlattices on 0001 sapphire substrates
  15. Optical properties of p-type ZnO:(N, As, Sb)
  16. Diffusion of Mn in gallium arsenide.
  17. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  18. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
  19. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  20. Preparation and characterization of hexagonal MnTe and ZnO layers
  21. p-type conducting ZnO: fabrication and characterisation
  22. GaN growth by Sublimation Sandwich Method
  23. Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE
  24. Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures
  25. Diffusion and diffusion induced defects in GaN
  26. Problems with cracking of AlxGa1-xN layers
  27. Argon as a Pressure-Transmitting Medium, Loading Diamond Anvil Cell (DAC) vs Phase Diagram

Presentation: oral at E-MRS Fall Meeting 2004, Symposium C, by Wlodek Strupinski
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-05-20 15:45
Revised:   2009-06-08 12:55