Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE
|Rafał Jakieła 1,2, A. Jasik 1,3, Ewa Dumiszewska 1,3, Dariusz Lenkiewicz 1,3, Wlodek Strupinski|
1. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
The diffusion characteristics of Mg dopant in MOVPE-grown GaN was studied. Cp2Mg, TMGa and NH3 were used as precursors. The Al2O3 was applied as a substrate. The temperatures range from 1000 C to 1300 C ensured conditions for device quality layers growth. Applying these temperatures, the back diffusion of magnesium were observed. Similar phenomenon was measured in Zn doped GaAs and InP.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium C, by Rafał Jakieła
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-16 16:52 Revised: 2009-06-08 12:55