Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE

Rafał Jakieła 1,2A. Jasik 1,3Ewa Dumiszewska 1,3Dariusz Lenkiewicz 1,3Wlodek Strupinski 

1. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Warsaw University of Technology (PW), Warszawa, Poland

Abstract

The diffusion characteristics of Mg dopant in MOVPE-grown GaN was studied. Cp2Mg, TMGa and NH3 were used as precursors. The Al2O3 was applied as a substrate. The temperatures range from 1000 C to 1300 C ensured conditions for device quality layers growth. Applying these temperatures, the back diffusion of magnesium were observed. Similar phenomenon was measured in Zn doped GaAs and InP.
Dopant profiles were investigated by Secondary Ions Mass Spectrometry (SIMS). We studied the effect of Cp2Mg partial pressure and growth temperature on diffusion profile and on diffusion coefficient of Mg atoms.
Abrupt diffusion profile was observed when Cp2Mg partial pressure was increased. Mg diffusion coefficient dependency on concentration was obtained from Boltzman-Matano analysis of dopant profile. Applying this method it was shown that diffusion coefficient was increasing by more than one order of magnitude within the concentration range: 5x1017 - 1x1020 cm-3.
Increasing growth temperature of Mg doped GaN caused shift of diffusion profiles towards layer-substrate interface. Activation energy EA and independent temperature factor DO were calculated by applying the profiles shift.

Related papers
  1. (Cd, Mn)Te Crystals for X and Gamma Radiation Detectors - an Alternative Material to CdTe and (Cd,Zn)Te. 
  2. The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates
  3. CVD of graphene on SiC
  4. Growth of SiC by PVT method with different sources of the cerium impurity, CeO2 or CeSi2
  5. The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
  6. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  7. Pinned and unpinned epitaxial and sublimated graphene on SiC
  8. Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
  9. Synthesis of gallium nitride nanowires by Sublimation Sandwich Method
  10. Raman spectroscopy of single and multilayer graphene on SiC substrates
  11. Growth of GaN layers on silicon and sintered GaN nano-ceramic substrates – TEM investigations
  12. Thick GaN layers on sapphire with various buffer layers
  13. Growth of high resistivity GaN layers by compensating defects generation
  14. MOCVD growth and characterization of ultrathin AlN/GaN superlattices on 0001 sapphire substrates
  15. Optical properties of p-type ZnO:(N, As, Sb)
  16. Diffusion of Mn in gallium arsenide.
  17. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  18. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
  19. Electrical Properties of GaN/AlGaN Hetrostructures
  20. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  21. Preparation and characterization of hexagonal MnTe and ZnO layers
  22. p-type conducting ZnO: fabrication and characterisation
  23. GaN growth by Sublimation Sandwich Method
  24. Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures
  25. Diffusion and diffusion induced defects in GaN
  26. Problems with cracking of AlxGa1-xN layers
  27. Argon as a Pressure-Transmitting Medium, Loading Diamond Anvil Cell (DAC) vs Phase Diagram

Presentation: poster at E-MRS Fall Meeting 2003, Symposium C, by Rafał Jakieła
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-06-16 16:52
Revised:   2009-06-08 12:55
Google
 
Web science24.com
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine