Rafał Jakieła

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interest(s):

Affiliation:

Institute of Electronic Materials Technology

address: Wólczyńska 133, Warszawa, 01-919, Poland
phone: 22 835 30 41
fax: 22 834 90 03
web: http://www.itme.edu.pl

Affiliation:

Polish Academy of Sciences, Institute of Physics

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: +48-22-8436601
fax: +48-22-8430926
web: http://www.ifpan.edu.pl

Participant:

High Pressure School 1999 (3rd)

began: 1999-09-13
ended: 1999-09-17
Presented:

Participant:

E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:
E-MRS Fall Meeting 2003
Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE

Participant:

E-MRS Fall Meeting 2005

began: 2005-09-05
ended: 2005-09-09
Presented:
E-MRS Fall Meeting 2005

Diffusion of Mn in gallium arsenide.

Publications:
  1. Argon as a Pressure-Transmitting Medium, Loading Diamond Anvil Cell (DAC) vs Phase Diagram
  2. Diffusion and diffusion induced defects in GaN
  3. Electrical Properties of GaN/AlGaN Hetrostructures
  4. Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE
  5. Optical properties of p-type ZnO:(N, As, Sb)

  6. Diffusion of Mn in gallium arsenide.

  7. Preparation and characterization of hexagonal MnTe and ZnO layers
  8. Problems with cracking of AlxGa1-xN layers
  9. p-type conducting ZnO: fabrication and characterisation
  10. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  11. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  12. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells



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