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Rafał Jakieła |
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Affiliation: |
Institute of Electronic Materials Technology|
| address: | Wólczyńska 133, Warszawa, 01-919, Poland | | phone: | 22 835 30 41 | | fax: | 22 834 90 03 | | web: | http://www.itme.edu.pl | |
Affiliation: |
Polish Academy of Sciences, Institute of Physics|
| address: | al. Lotników 32/46, Warszawa, 02-668, Poland | | phone: | +48-22-8436601 | | fax: | +48-22-8430926 | | web: | http://www.ifpan.edu.pl | |
Participant: |
| began: | 1999-09-13 |
| ended: | 1999-09-17 |
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Publications: |
- Argon as a Pressure-Transmitting Medium, Loading Diamond Anvil Cell (DAC) vs Phase Diagram
- (Cd, Mn)Te Crystals for X and Gamma Radiation Detectors - an Alternative Material to CdTe and (Cd,Zn)Te.
- Diffusion and diffusion induced defects in GaN
- Electrical Properties of GaN/AlGaN Hetrostructures
- Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
- Growth of SiC by PVT method with different sources of the cerium impurity, CeO2 or CeSi2
- Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE
- Optical properties of p-type ZnO:(N, As, Sb)
Diffusion of Mn in gallium arsenide. - Preparation and characterization of hexagonal MnTe and ZnO layers
- Problems with cracking of Al_xGa_1_-_xN layers
- p-type conducting ZnO: fabrication and characterisation
- TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
- The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
- Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
- Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
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