Problems with cracking of AlxGa1-xN layers

Ewa Dumiszewska 1,3,  Dariusz Lenkiewicz 1,3,  Wlodek Strupinski ,  Agata Jasik 1,3,  Rafał Jakieła 1,2,  Marek Wesołowski 1

1. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Warsaw University of Technology (PW), Warszawa, Poland

Abstract


'AlxGa1-xN' is a wide gap material, which can be used for preparing of UV detectors. Unfortunately there are problems with cracking of that layers above some critical thickness, which is a little smaller from the one used for detectors (about 1μm). Our investigations concentrated on the reason of forming of the cracking. To avoid that we used so called special AlN nucleation layer, which was to stop the relaxation. We received the strained layer free of cracking, but with very big number of dislocations. We compared dislocation density of strained and relaxed 'AlxGa1-xN' layers. The first one characterized higher dislocation density than the second one.
We also investigated the problem of cracking of 'AlxGa1-xN' epitaxial layers during the doping. There was the problem with controlling the process. The relaxation of the layers started for very low impurities density and went on when we increased the amount of the dopant.

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Presentation: oral at E-MRS Fall Meeting 2003, Symposium C, by Ewa Dumiszewska
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-27 10:49
Revised:   2003-06-24 09:05
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