Diffusion and diffusion induced defects in GaN

Dmytro Kolesnikov 1Witold Łojkowski 1Christian Jäger 3Wolfgang Jäger 3Michal Bockowski 1Rafał Jakieła 2

1. Polish Academy of Sciences, High Pressure Research Center (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Christian-Albrechts-Universitaet Kiel, Technische Fakultaet, Kaiserstr. 2, Kiel D-24143, Germany

Abstract

GaN and it solid solution with InN and AlN have become very popular for the last 10 years. It is connected with the possibility of using it in the optoelectronics. Diffusion processes in GaN play a very important role. Annealing at high temperatures is useful for many technological processes such as removing of defects after implantation, doping or electrical contact activation. The process of laser degradation is connected with diffusion of impurities. This process depends strongly on structural quality of the epitaxial layers.
The aim of this work was to obtain the first diffusion coefficients for different elements in GaN at the temperatures higher than decomposition temperature of GaN and to understand the mechanism of mass transport in this material.
It was found that the diffusion of impurities brings the V-shape defects in GaN. The mechanism of diffusion and defects formation in GaN was proposed. The diffusion coefficients and the activation energies for Mg, Zn, Ni and Au diffusion in GaN were calculated.

 

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Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Dmytro Kolesnikov
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-06-05 12:28
Revised:   2009-06-08 12:55