Modelling of indium rich clusters in MOCVD InGaN/GaN multilayers
|Grzegorz Jurczak 2, Grzegorz Maciejewski 2, Slawomir Kret 1, Paweł Dłużewski 2, Pierre Ruterana 3|
1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
In this approach the study of a 1-5 nm diameter indium cluster in MOCVD InGaN/GaN quantum well is presented. The quantitative High Resolution Transmission Electron Microscopy (HRTEM) coupled with image simulation and Finite Element Method (FEM) thin foil relaxation modeling are used. Results obtained by means of those two technics are compared.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium B, by Grzegorz Jurczak
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-27 18:01 Revised: 2009-06-08 12:55