First-principles calculations of the optical band-gap properties of Mg1-xZnxO alloys

Nadia Abbouni 2Lilia Beldi 2Bachir Bouhafs 1,2Abderrahmane Kadri 4Pierre Ruterana 3

1. Abdus-Salam International Center for Theoretical Physics (ICTP), strada costiera, 11, Trieste 34014, Italy
2. Modelling and Simulation in Materials Science Laboratory (MSMSL), University of Sidi Bel-Abbes, Sidi Bel-Abbes 22000, Algeria
3. SIFCOM, UMR6176, CNRS-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France
4. LEMOP, Physics Department, University of Es-Senia, Oran 31000, Algeria

Abstract

Mg1-xZnxO alloys became of great interest recently, since in principle a wurtzite-rocksalt combination spans a wider range of optical band gaps than either a rocksalt-rocksalt or a wurtzite-wurtzite alloy. For example, alloys of ZnO (Eg =3.4 eV) with MgO (Eg =7.7 eV) could span a range from blue to deep UV, which is of interest for optical laser and light-emitting diode applications.

We report here on first-principles total-energy calculations of the structural and electronic properties of ZnO, MgO and ordered Mg1-xZnxO alloys in various crystal structures (CuAu-I and Luzonite) using the hybrid full-potential augmented plane-wave plus local orbitals (APW+lo) method. We have used the local-density approximation (LDA) for the exchange and correlation potential. The ground state properties, equilibrium lattice constants, bulk moduli, charge densities, band structures, and densities of states are determined.

Related papers
  1. Method of Manganese co-doping of LT ZnO films
  2. Formation of precipitates in Mn doped ZnO layers deposited by magnetron sputtering
  3. The structure of nucleation Zn(Al)O layers for transparent metal oxide application
  4. Theoretical studies of ZnS1-xOx alloy band structures
  5. FE and MD simulation of InGaN QD formation induced by stress field of threading dislocations
  6. Strain Relaxation Effect on the Properties of Ultra Thin ZnO Film on Sapphire (0001) Substrates by Pulsed Laser Deposition
  7. Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM
  8. Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs
  9. Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications
  10. Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries
  11. Investigation of InN layers grown by MOCVD and MBE using analytical and high resolution TEM
  12. Interfacial diffusion and precipitation in rf magnetron sputtered Mn doped ZnO layers
  13. The atomic configuration of tilt grain boundaries around <0001> in GaN
  14. First principles study of electronic structure of InN and AlN substitution atomic layers embedded in GaN
  15. Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
  16. Image processing of HREM micrograph for determination size distribution of Co nanocrystals in Cu matrix
  17. Quantitative study of Cd atoms distribution in CdTe/ZnTe quantum dots superlattice by HRTEM
  18. The atomic structure of defects formed during doping of GaN with rare earth ions
  19. Transmission electron microscopy structural investigations of Tm implanted GaN
  20. Study of photo- and electro-luminescence related with Er3+ ions in GaN:Er
  21. Quantitative transmission electron microscopy investigation of localised stress in heterostructures
  22. Modelling of indium rich clusters in MOCVD InGaN/GaN multilayers

Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by Bachir Bouhafs
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-15 14:15
Revised:   2006-05-15 14:15
Google
 
Web science24.com
© 1998-2008 pielaszek research, all rights reserved Powered by the Conference Engine