Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries
|Bere Antoine 1,2, Belabbas Imad 1, Gerard Nouet 1, Pierre Ruterana 1, Jean Koulidiati 2, Chen Jun 3|
1. SIFCOM, UMR6176, CNRS-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France
Defects containing point defects, impurities, and intentionally doping in GaN, are the subject of numerous experimental and theoretical investigations. It is well known that their presence can reduce the performance of optoelectronic devices due to a multiplicity of parasitic luminescence which they are responsible.
Presentation: poster at E-MRS Fall Meeting 2005, Symposium F, by Bere Antoine
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-20 09:23 Revised: 2009-06-07 00:44
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