For efficient detectors in a wide range of wavelengths, high transparency, and good electrical conductivity can only be achieved by creating electron degeneracy in a wide band gap semiconducting oxide. To this end, transparent conducting oxides such as Sn doped In2O3 (ITO), SnO2 (NESA) and ZnO are widely studied. In particular, ZnO films are usually doped with Si, Ga, Al, and so on. Among these, the Al-doped ZnO (AZO) transparent conducting films have high transmittance in the visible region and low resistivity. Besides, AZO has also several advantages such as non-toxicity, low cost and high stability against hydrogen plasma. Because of these many advantages, this material is suitable for the fabrication of solar cells, flat panel display electrodes, surface acoustic devices, optical waveguides, gas sensors, and micro-machined actuators. In this work, the single crystalline transparent conducting Al-doped ZnO films grown on sapphire(0001) by Rf-magnetron sputtering of various AZO targets are studied. We report on the structure of the thin Al:ZnO films and crystalline quality versus Al content, layer thickness as well as their behaviour during post deposition annealing.

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1. Investigation of InN layers grown by molecular beam epitaxy on Si or GaN templates
2. Structural properties of InAlN thin layers for HEMT applications
3. Low frequency noise measurements in InN films
4. The microstructure and properties of InN layers
5. Role of threading dislocations on Indium distribution in InGaN alloys
6. Optical properties of InN grown on Si(111) substrate
7. Ferromagnetism in transition-metal doped ZnS
8. Electronic and magnetic properties of Co-doped ZnO: first principles study
9. Method of Manganese co-doping of LT ZnO films
10. Formation of precipitates in Mn doped ZnO layers deposited by magnetron sputtering
11. First-principles calculations of the optical band-gap properties of Mg_1-xZn_xO alloys
12. Theoretical studies of ZnS_1-xO_x alloy band structures
13. FE and MD simulation of InGaN QD formation induced by stress field of threading dislocations
14. Strain Relaxation Effect on the Properties of Ultra Thin ZnO Film on Sapphire (0001) Substrates by Pulsed Laser Deposition
15. Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM
16. Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs
17. Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications
18. Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries
19. Investigation of InN layers grown by MOCVD and MBE using analytical and high resolution TEM
20. Interfacial diffusion and precipitation in rf magnetron sputtered Mn doped ZnO layers
21. The atomic configuration of tilt grain boundaries around <0001> in GaN
22. First principles study of electronic structure of InN and AlN substitution atomic layers embedded in GaN
23. Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
24. Image processing of HREM micrograph for determination size distribution of Co nanocrystals in Cu matrix
25. Quantitative study of Cd atoms distribution in CdTe/ZnTe quantum dots superlattice by HRTEM
26. Grain orientation-location measurement by combined use of x-ray topography with diffractometry
27. The atomic structure of defects formed during doping of GaN with rare earth ions
28. Transmission electron microscopy structural investigations of Tm implanted GaN
29. Study of photo- and electro-luminescence related with Er³⁺ ions in GaN:Er
30. Quantitative transmission electron microscopy investigation of localised stress in heterostructures
31. Modelling of indium rich clusters in MOCVD InGaN/GaN multilayers