The structure of nucleation Zn(Al)O layers for transparent metal oxide application

Pierre Ruterana 1,  Morad Abouzaid 1,  Yong B. Kwon ,  J.H. Je 2

1. SIFCOM, UMR6176, CNRS-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France
2. Pohang University of Science and Technology (POSTECH), San 31, Hoyja-dong, Nam-gu, Pohang 790-784, Korea, South

Abstract

For efficient detectors in a wide range of wavelengths, high transparency, and good electrical conductivity can only be achieved by creating electron degeneracy in a wide band gap semiconducting oxide. To this end, transparent conducting oxides such as Sn doped In2O3 (ITO), SnO2 (NESA) and ZnO are widely studied. In particular, ZnO films are usually doped with Si, Ga, Al, and so on. Among these, the Al-doped ZnO (AZO) transparent conducting films have high transmittance in the visible region and low resistivity. Besides, AZO has also several advantages such as non-toxicity, low cost and high stability against hydrogen plasma. Because of these many advantages, this material is suitable for the fabrication of solar cells, flat panel display electrodes, surface acoustic devices, optical waveguides, gas sensors, and micro-machined actuators. In this work, the single crystalline transparent conducting Al-doped ZnO films grown on sapphire(0001) by Rf-magnetron sputtering of various AZO targets are studied. We report on the structure of the thin Al:ZnO films and crystalline quality versus Al content, layer thickness as well as their behaviour during post deposition annealing.

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Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by Pierre Ruterana
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-15 10:05
Revised:   2006-05-15 10:05
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