Slawomir Kret

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Affiliation:


Polish Academy of Sciences, Institute of Physics

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: +48-22-8436601
fax: +48-22-8430926
web: http://www.ifpan.edu.pl

Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

Quantitative transmission electron microscopy investigation of localised stress in heterostructures

Participant:


E-MRS Fall Meeting 2004

began: 2004-09-06
ended: 2004-09-10
Presented:

E-MRS Fall Meeting 2004

Quantitative study of Cd atoms distribution in CdTe/ZnTe quantum dots superlattice by HRTEM

Participant:


E-MRS Fall Meeting 2009

began: 2010-09-14
ended: 2010-09-18
Presented:

E-MRS Fall Meeting 2009

Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with two temperatures process studied by transmission electron microscopy.

Publications:


  1. Image processing of HREM micrograph for determination size distribution of Co nanocrystals in Cu matrix
  2. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
  3. Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with two temperatures process studied by transmission electron microscopy.
  4. MBE growth, structural, magnetic, and electric properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires
  5. Medium scale modeling of the CdTe/ZnTe islands the empirical potential and finite element approach
  6. Modelling of indium rich clusters in MOCVD InGaN/GaN multilayers
  7. Nanostructure of laser annealed Ge-implanted near-surface Si layers
  8. Quantitative study of Cd atoms distribution in CdTe/ZnTe quantum dots superlattice by HRTEM
  9. Quantitative transmission electron microscopy investigation of localised stress in heterostructures
  10. Structure of Si:Mn annealed under enhanced stress conditions
  11. TEM investigation of processed  InGaN based laser grown by PAMBE on bulk GaN substrate



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