Modification of the nanostructure of the amorphised Si near-surface layer

Dorota Klinger 2Elżbieta Łusakowska 2Danuta Żymierska 2Bolesław Kozankiewicz 2Lech Nowicki 1Anna Stonert 1Julian Auleytner 2

1. Soltan Institute for Nuclear Studies, Hoża 69, Warszawa 00-681, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland

Abstract


As a result of the implantation with a respectively high dose, a near-surface layer of highly disordered structure is created in semi-conducting materials. The implantation of Si with Sn+ ions as well as with the Ge+ ions is examined and compared due to relatively high mass of ions, sharp boundary between the amorphised layer and the crystal matrix. For crystal lattice reconstruction of the disturbed near-surface layer, ultraviolet laser pulse can be used. Evolution of defect structure is characterised by means of Rutherford back-scattering and atomic force microscopy. Nanosecond laser annealing can lead to the recrystalisation of the amorphised near-surface layer and to formation of misfit dislocations on the surface in the melted regions.

Related papers
  1. The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
  2. Evaluation of the depth extension of the damages induced by FLASH pulses in silicon crystals
  3. Damage of gallium arsenide created after irradiation by ultra-short VUV laser pulse
  4. Ferromagnetic transition induced by re-crystallization of amorphous (Ge,Mn)Te layers
  5. ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.
  6. Preparation of the ZnO substrate surface
  7. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  8. Ferromagnetic (Eu,Gd)Te/PbTe semiconductor heterostructures
  9. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  10. Structural and optical characterization of epitaxial layers of CdTe/PbTe grown on BaF2 (111) substrates
  11. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  12. Structure modifications in materials irradiated by ultra-short pulses of VUV free electron laser
  13. X-ray study of quartz single crystals implanted with fast Ar ions
  14. Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing
  15. X-ray diffractometric study of micro-precipitates created by fast nitrogen ions in GaAs single crystal
  16. Nanostructure of laser annealed Ge-implanted near-surface Si layers
  17. Defect structure of Sn-implanted Si crystal annealed by nanosecond laser pulse

Presentation: poster at E-MRS Fall Meeting 2004, Symposium D, by Dorota Klinger
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-08-06 14:13
Revised:   2009-06-08 12:55
Google
 
Web science24.com
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine