As a result of the implantation with a respectively high dose, a near-surface layer of highly disordered structure is created in semi-conducting materials. The implantation of Si with Sn⁺ ions as well as with the Ge⁺ ions is examined and compared due to relatively high mass of ions, sharp boundary between the amorphised layer and the crystal matrix. For crystal lattice reconstruction of the disturbed near-surface layer, ultraviolet laser pulse can be used. Evolution of defect structure is characterised by means of Rutherford back-scattering and atomic force microscopy. Nanosecond laser annealing can lead to the recrystalisation of the amorphised near-surface layer and to formation of misfit dislocations on the surface in the melted regions.