X-ray study of quartz single crystals implanted with fast Ar ions

Krzysztof Godwod 3Danuta Zymierska 3Stefan Jedynak 3Julian Auleytner Andrzej Turos 2Jarosław Choiński 1

1. Warsaw University, Heavy Ion Laboratory (HIL), Pasteura 5a, Warszawa 02-093, Poland
2. Soltan Institute for Nuclear Studies, Hoża 69, Warszawa 00-681, Poland
3. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland

Abstract

The aim of the research was to determine structural changes induced by heavy ion implantation in single crystals. Previously it was shown that the direction of radiation flow is changed in the ion shot-through layer at the depth corresponding to the ion mean range. In order to perform new experiments of ion implantation, we planed and constructed the special irradiation chamber for the heavy ion multiple implantation, which allows one to irradiate different places on the surface of a studied crystal without necessity of opening it. The device is equipped with the special tantalum diaphragm, which suffers implantation to be performed in the strictly determined regions of sample. Such construction makes possible to repeat the implantation process many times without renewal pumping, which effects in large saving of time and work.
As an example of the use of the chamber the implantation of quartz single crystal with 2.0 MeV/amu Ar ions at three different doses is presented. The X-ray study results are discussed.

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Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Krzysztof Godwod
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-06-11 11:35
Revised:   2009-06-08 12:55
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