Fabrication and characterization of II-VI diluted magnetic p-n junctions
|Valery Kolkovsky 1, Renata Butkute 1, Elżbieta Janik 1, Krzysztof Fronc 1, Grzegorz Karczewski 1,2|
1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
The active control of spins in semiconductors leads to significant advances in technology of digital information storage, magnetic recording and sensing. Recently, Zutic and Fabian have theoretically considered a magnetic p-n junction [1, 2]. One side of the device was made of magnetic material with the giant spin splitting and the other one of a nonmagnetic semiconductor. The presence of external magnetic field could allow spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range. They predict new phenomena of exponential and giant magnetoresistance, spin-voltaic effect, spin-valve effect, when a non-equilibrium spin is added into the junction.
Presentation: oral at E-MRS Fall Meeting 2004, Symposium F, by Valery Kolkovsky
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-05-18 19:22 Revised: 2009-06-08 12:55